Oct 22, 16:00 - 18:00, Improvement of InGaN-based light-emitting diodes: hydrogen passivation - based device fabrication, LED structure optimization, and III-Nitride growth using different substrates (B3 L5 R5220), Pavel Kirilenko, Ph.D. Student, Electrical and Computer Engineering
Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN (News)
InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall (News)
Investigation of the p-GaN layer thickness of InGaN-based photoelectrodes for photoelectrochemical hydrogen generation (News)
Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications (News)