Improvement of InGaN-based light-emitting diodes: hydrogen passivation - based device fabrication, LED structure optimization, and III-Nitride growth using different substrates Pavel Kirilenko, Ph.D. Student, Electrical and Computer Engineering Oct 22, 16:00 - 18:00 B3 L5 R5220
Microstructural Analysis and Engineering of III-Nitride-Based Heterostructures for Optoelectronic Devices Martín Velázquez Rizo, Ph.D. Student, Electrical and Computer Engineering Nov 1, 10:00 - 11:30 B1 L3 R3119 photocatalytic energy conversion
