Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays
The paper reports the luminescence improvement of InGaN-based red LEDs by introducing a micro-hole array. This technique provides the improvement of the internal quantum efficiency and light extraction efficiency. The InGaN-based red LEDs are very attractive for next-generation micro-LED display, because the material is a family of blue and green LEDs.
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This study demonstrates the performance improvements of InGaN-based red light-emitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20 mA were 0.6 mW and 1.5%, which are 8.5% higher than those of the PLED.
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Daisuke Iida
- Senior Research Scientist, Electrical and Computer Engineering
Zhe Zhuang
- Postdoctoral Research Fellow, Electrical and Computer Engineering
Pavel Kirilenko
- Ph.D. Student, Electrical and Computer Engineering