Investigation of the p-GaN layer thickness of InGaN-based photoelectrodes for photoelectrochemical hydrogen generation
1 min read
·
About
The paper entitled “Investigation of p-GaN layer thickness of InGaN-based photoelectrode for photoelectrochemical hydrogen generation” mentioned the enhancement of energy conversion efficiency by band engineering.
Japanese Journal of Applied Physics 58, SCCC32 (2019).
DOI: https://doi.org/10.7567/1347-4065/ab09d7