Improvement of InGaN-based light-emitting diodes: hydrogen passivation - based device fabrication, LED structure optimization, and III-Nitride growth using different substrates Pavel Kirilenko, Ph.D. Student, Electrical and Computer Engineering Oct 22, 16:00 - 18:00 B3 L5 R5220 III-Nitride materials have continuously attracted the attention of semiconductor researchers for the last decades. III-Nitrides are considered a key material for a wide range of applications, such as power electronics and color displays, and have proven to be suitable as an efficient light source. This work provides a multi-directional approach for realizing efficient InGaN Light-Emitting Diodes (LEDs).
High Efficiency Photovoltaic Cells and their Applications to Green Hydrogen Production Prof. Yoshiaki Nakano, Electrical Engineering and Information Systems, The University of Tokyo Dec 4, 14:30 - 15:30 B4 L5 R5209 III - V compound semiconductors photovoltaics This lecture will review research trends of III-V compound semiconductor ultra-high efficiency photovoltaic (PV) cells based on multiple junctions and quantum well/dot approaches. It will also introduce field trials of highly efficient green hydrogen production through the direct connection of electrolyzers and concentrator PV modules with the above-mentioned compound semiconductor solar cells built-in.
Microstructural Analysis and Engineering of III-Nitride-Based Heterostructures for Optoelectronic Devices Martín Velázquez Rizo, Ph.D. Student, Electrical and Computer Engineering Nov 1, 10:00 - 11:30 B1 L3 R3119 photocatalytic energy conversion This dissertation presents a variety of methodological approaches to characterize, from a microstructural point of view, different properties of novel III-nitride-based heterostructures and devices. The results of the various characterizations contributed to developing novel LEDs and photocatalysts. The analyses and results presented in this dissertation strongly relied on the analytical capabilities offered by transmission electron microscopy, which proved to be a convenient and versatile tool for the characterization of many aspects related to the fabrication of III-nitride-based optoelectronic devices.
Visible light-emitting diodes for next-generation displays Daisuke Iida, Senior Research Scientist, Electrical and Computer Engineering Oct 3, 12:00 - 13:00 KAUST Visible light emitting diodes for next generation displays This talk will provide an overview of the III-nitride-based visible light-emitting diodes (LEDs). Especially, the InGaN-based blue LEDs are very contributed to energy-saving for light sources all over the world.
Blue LED material beyond Blue for Micro-LED Displays Kazuhiro Ohkawa, Professor, Electrical and Computer Engineering Apr 4, 12:00 - 13:00 KAUST LED material Displays Energy is an indispensable part of our lives. We are challenging energy-saving novel light emitters and clean-energy generation systems at Energy Conversion Devices and Materials (ECO Devices) Laboratory at KAUST. The former is based on MOCVD technology, material science, and device technology. The latter is the nitride photocatalyst invented by Ohkawa. The development of highly-efficient InGaN-based blue LEDs was the topic of the 2014 Nobel Prize in Physics. InGaN-based green LEDs were realized after improving the quality of higher-In-content InGaN. The three primary colors in light are RGB. The current red LEDs are based on InGaP as the active region. If we realize red LEDs by InGaN, we can fabricate the monolithic RGB LEDs in a wafer. Such RGB integration will be a breakthrough for micro-LED displays that are the next generation after the OLED displays. In this seminar, the science of MOCVD, the growth of high-In-content InGaN, and the state-of-the-art InGaN-based red LEDs will be introduced.
Blue LED material extended to Green, Yellow, and now Red Kazuhiro Ohkawa, Professor, Electrical and Computer Engineering Apr 5, 12:00 - 13:00 KAUST electrical engineering energy LED OLEDs MOCVD In this seminar, the science of MOCVD, the material science of InGaN, and the new-born InGaN-based red LED performance will be discussed. The three primary colors in light are RGB. Green and blue LEDs have been realized by using InGaN active region. The current red LEDs are based on AlGaAs or InGaP as the active region. If we can realize red LEDs by InGaN, it is possible to integrate RGB LEDs in a wafer. Such RGB integration is a breakthrough to develop the next displays, so-called, micro-LED displays that are the next after the OLED displays, and functional LED lightings.
