News

April 2024

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  Paper accepted in Phys. Status Solidi A!

  1 min read · Fri, Apr 5 2024

  News

  We report a selective passivation of p-GaN via hydrogen plasma treatment for InGaN single-quantum-well red light-emitting diodes.

December 2023

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  Prestigious international awards for KAUST ECE students

  1 min read · Tue, Dec 12 2023

  Awards News

  KAUST ECE students shine bright, winning prestigious international awards.

November 2023

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  Paper accepted in IEEE Photonics Journal!

  1 min read · Fri, Nov 24 2023

  News

  A brief account of photonics research activities in the selected countries in the Middle East and Africa is presented in this article. Though not comprehensive, we hope to provide a glimpse of the research landscape in the region, and the collaboration and connection with each other and the international partners.
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  Optimizing Al composition in barriers for InGaN amber micro-LEDs with high wall-plug efficiency

  1 min read · Sun, Nov 19 2023

  News

  The manuscript entitled "Optimizing Al composition in barriers for InGaN amber micro-LEDs with high wall-plug efficiency" that has been accepted for publication in the IEEE Electron Device Letters.
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  Congratulations! Pavel's paper has been selected for the JSAP Young Scientist Award!

  1 min read · Fri, Nov 17 2023

  News

  His first authored paper "InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall, Appl. Phys. Expres 15 (2022) 084003" has been selected for the JSAP Young Scientist Award! The JSAP Young Scientist Award is presented to young researchers who have mainly authored excellent papers that are expected to contribute to the progress of applied physics.
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  Congratulations! Cesur received the Best Student Award at ICNS-14 in Japan.

  1 min read · Fri, Nov 17 2023

  News

  Cesur received the Best Student Award at ICNS-14 in Japan. He has a great opportunity to showcase his research on "InGaN Red LEDs Fabricated by Hydrogen Plasma Passivation ". The 14th International Conference on Nitride Semiconductors (ICNS-14) is the biggest conference that presents high-impact scientific and technological advances in materials and devices in group-III nitride semiconductors.
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  Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates

  1 min read · Thu, Nov 2 2023

  News

  We report the growth of N-polar InGaN layers on misoriented ScAlMgO4 (SAM) substrates with offset of 0.3 to 5.8o toward the m-plane. We obtained an unprecedented crystalline quality of N-polar InGaN using SAM substrates with a 0.5o offset, which exhibited a 000-2 X-ray rocking curve full width at half maximum value of 223 arcsec.

September 2023

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  Paper accepted in Journal of Physics: Photonics!

  1 min read · Wed, Sep 13 2023

  News

  The report shows the micro-LED roadmap for the next generation of smart displays. The innovation in epitaxial growth technology can provide critical solutions for the micro LED performance in various aspects.

August 2023

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  RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

  1 min read · Fri, Aug 4 2023

  News

  We demonstrated a 330 ppi monolithic RGB micro light-emitting diodes (μLED) array of blue, green, and red GaInN-based LEDs stacked on the same wafer using tunnel junction.
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  Paper accepted in ChemComm!

  1 min read · Tue, Aug 1 2023

  News

  We present results from a study addressing the unbiased water-splitting process and its side reactions on n-GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. A water-splitting process with n-GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the n-GaN electrocorrosion with surface modifications of n-GaN structures.

July 2023

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  Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

  1 min read · Fri, Jul 7 2023

  News

  we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. The LED device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

May 2023

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  Structural and optical analyses for InGaN-based red micro-LED

  1 min read · Sat, May 27 2023

  News

  National Yang Ming Chiao Tung University and KAUST Team reported the structural and optical characteristics of a red micro-LED.
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  Congratulations! Mohammed received the Student Poster Award in KAUST Semiconductor Forum.

  1 min read · Thu, May 18 2023

  News

  Congratulations! Mohammed received the Student Poster Award (3rd Place) in KAUST Semiconductor Forum. He presented the latest of his research work about InGaN growth on novel ScAlMgO4 substrates toward yellow-red LEDs and LDs.
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  Improvement of optical properties of InGaN-based red multiple quantum wells

  1 min read · Wed, May 17 2023

  News

  Xiamen University and KAUST Team have optical characterized the high-quality InGaN-based red LED structures by photoluminescence.
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  Our review paper is ranked in the most read!

  1 min read · Wed, May 17 2023

  News

  This review paper in 2022 is still ranked in the Most Read of Semiconductor Science and Technology (IOP Publishing). The paper reviews nitride-based red LEDs and micro-LEDs. The field is growing and getting popular.

April 2023

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  Dr. Daisuke Iida has been appointed as Invited Faculty!

  1 min read · Wed, Apr 12 2023

  News

  Dr. Daisuke Iida has been appointed as Invited Faculty at Center for Integrated Research of Future Electronics (Director: Prof. Hiroshi Amano (Nobel laureate)), Institute of Materials and Systems for Sustainability, Nagoya University

March 2023

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  Certificate of Recognition & Appreciation as 2022 ACS Publications Peer Reviewer, American Chemical Society

  1 min read · Thu, Mar 16 2023

  News

  Prof. Ohkawa received a Certificate of Recognition & Appreciation as 2022 ACS Publications Peer Reviewer, American Chemical Society.
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  Received the Japan Society of Applied Physics (JSAP) Outstanding Paper Award 2022!

  1 min read · Thu, Mar 16 2023

  News

  Professor Kazuhiro Group recently received the Japan Society of Applied Physics (JSAP) Outstanding Paper Award 2022. According to the JSAP, the award is presented to “the authors of outstanding papers published in the membership journal, Oyo Buturi, Japanese Journal of Applied Physics, and Applied Physics Express. These awards honor the authors of papers that are regarded as exceptional achievements in applied physics.”
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  Paper accepted in AIP Advances!

  1 min read · Fri, Mar 10 2023

  News

  We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality.

January 2023

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  Paper accepted in Frontiers in Chemical Engineering!

  1 min read · Wed, Jan 11 2023

  News

  Martin, in collaboration with the EXPEC ARC, Saudi Aramco, reviewed the different technologies and approaches explored to improve the energy efficiency and stability of H2S electrolytic systems at temperatures below the sulfur dew point. The review paper was published in Frontiers in Chemical Engineering.”

December 2022

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  Congratulations! New Journal of Chemistry adopts Artem’s work as the cover page.

  1 min read · Tue, Dec 13 2022

  News

  The New Journal of Chemistry is for new directions in chemistry. The latest issue (volume 46, Nover 48) has adopted scientific art made by Artem Shushanian (a PhD candidate).
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  Paper accepted in Crystals (special issue of the 30th anniversary of Shuji Nakamura’s Contribution to Blue LEDs )

  1 min read · Wed, Dec 7 2022

  News

  We have developed a new LED structure by using hydrogen passivation. The result is accepted in Crystals to the Special Issue "In Celebration of the 30th Anniversary of Shuji Nakamura’s Contribution to Blue Light-emitting Diodes”. The new device showed higher EQE and WPE compared to the conventional LED structures.

November 2022

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  Professor Kazuhiro Ohkawa receives JSAP Outstanding Paper Award

  1 min read · Mon, Nov 28 2022

  News

  KAUST Professor of Electrical Engineering Kazuhiro Ohkawa recently received the Japan Society of Applied Physics (JSAP) Outstanding Paper Award 2022. He will officially receive his award at the JSAP’s annual Spring Meeting in Tokyo in March 2023.
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  A US patent has been issued on October 11, 2022.

  1 min read · Mon, Nov 28 2022

  News

  A US patent (11,469,574) has been issued by the United States Patent and Trademark Office (USPTO) on October 11, 2022. The patent covers our original MOCVD methods and device structures.
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  Paper accepted in New Journal of Chemistry!

  1 min read · Mon, Nov 7 2022

  News

  We studied the electrochemical property of nitride semiconductors. It was expected to be the three-electron nature so far. However, we have found out that it is the six-electron nature. The six-electron nature was observed in different solutions and pH levels, resulting in a universal phenomenon for nitride semiconductors. The result will be useful to control electrochemical etching and other treatments to achieve their precise control.

October 2022

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  A special lecture at the Institute of Electrical Engineers of Japan, October 2022

  1 min read · Thu, Oct 27 2022

  News

  Prof. Ohkawa delivers a special lecture “Development of InGaN-based red micro-LEDs for display applications” via Zoom for the committee about high-power light sources of the Institute of Electrical Engineers of Japan on October 28, 2022.
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  An invited talk at SPIE Photonics West 2023, USA, Jan-Feb 2023

  1 min read · Thu, Oct 6 2022

  News

  Prof. Ohkawa delivers an invited talk about “Strain-compensated InGaN-based standard/micro-LEDs” at the SPIE Photonics West, San Francisco, USA, Jan 30 – Feb 2, 2023
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  An invited talk at APWS 2022, Taiwan, November 2022

  1 min read · Thu, Oct 6 2022

  News

  Prof. Ohkawa delivers an invited talk about “InGaN-based red micro-LEDs” at the 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), Taoyuan, Taiwan, November 13-18, 2022
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  Prof. Ohkawa, the appointment to the Scientific Reports Editorial Board

  1 min read · Tue, Oct 4 2022

  News

  Prof. Ohkawa has accepted the nomination of the Editorial Board Member of the Scientific Reports, Nature Publishing Group. Scientific Reports is an open-access journal publishing rigorously peer-reviewed research from across the natural sciences, psychology, medicine, and engineering. This journal is one of the highly ranked ones, has a 2-year impact factor: 4.996 (2021), and is the 5th most-cited journal in the world.
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  Dr. Iida, the appointment to the Scientific Reports Editorial Board

  1 min read · Tue, Oct 4 2022

  News

  Dr. Iida has accepted the nomination of the Editorial Board Member of the Scientific Reports, Nature Publishing Group. Scientific Reports is an open-access journal publishing rigorously peer-reviewed research from across the natural sciences, psychology, medicine, and engineering. This journal is one of the highly ranked ones, has a 2-year impact factor: 4.996 (2021), and is the 5th most-cited journal in the world.

September 2022

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  An invited lecture “Micro-LEDs for Display Applications” at a WideG symposium

  1 min read · Thu, Sep 29 2022

  News

  Prof. Ohkawa delivers an invited lecture “Micro-LEDs for Display Applications” via Zoom at the Special Symposium on Widegap Semiconductor Optical & Electronic Devices organized by the Japan Society of Wide Gap Semiconductors (WideG).
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  Selected as Invited talk at IWN2022 (Berlin, Germany)

  1 min read · Tue, Sep 13 2022

  News

  Prof. Kazuhiro Ohkawa deliver an invited talk at International Workshop on Nitride Semiconductors (IWN). The IWN is a major conference in the fields of LEDs and Lasers. He is the only invited speaker from Saudi Arabia. Mohammed, Artem, and Daisuke give three oral talks and one poster.
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  Selected as “Highlighted talk” at the Autumn meeting of Japanese Society of Applied Physics.

  1 min read · Tue, Sep 13 2022

  News

  Our Scheduled presentation is selected as “Highlighted talk” at the Autumn meeting of the Japanese Society of Applied Physics. Mohammed Najmi et al., “Structural analysis of N-polar InGaN layer grown on ScAlMgO4 substrate without buffer layer” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%.

July 2022

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  InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall

  1 min read · Thu, Jul 7 2022

  News

  We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN green micro-LED performance. Hydrogen passivation deactivates the surface region of p-GaN around the perimeter of the device mesa. Thus, hole injection is suppressed in this region, where etchingcaused material degradation results in leakage current, decreasing device efficiency. We have confirmed the hydrogen passivation effect on LED square pixels with sizes of 20 and 100 μm. For smaller LEDs, the reverse leakage current has reduced more than tenfold, and the external quantum efficiency of LEDs was enhanced 1.4-times due to the suppression of the non-radiative recombination.

June 2022

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  High-efficiency InGaN red micro-LEDs for visible light communication

  1 min read · Mon, Jun 27 2022

  News

  In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.
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  Paper accepted in Applied Physics Letters!

  1 min read · Sat, Jun 18 2022

  News

  In this work, we present the characterization of red InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures. The results of photoluminescence (PL) studies show that a thicker n-GaN layer is beneficial for obtaining higher In-content for red MQWs. Our findings imply that in order to achieve high-efficiency InGaN MQWs for red emission, enhancing the uniformity of In-content distribution in the active region and decreasing non-radiative recombination centers are critical challenges.
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  Paper accepted in Materials Science in Semiconductor Processing!

  1 min read · Thu, Jun 16 2022

  News

  The pump and probe technique in Raman spectroscopy is used to demonstrate the phonon transport properties of an In0.05Ga0.95N/GaN heterostructure. This method has the advantage of enabling the study of phonon transport processes inside and at interfaces of films with crystal defects by visualizing the shift of phonon-mode energies due to local heating.
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  Paper accepted in AIP Advances! This paper has been chosen as an Editor's Pick. Congratulations!

  1 min read · Wed, Jun 8 2022

  News

  We report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. The packaged LED's external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays. This paper has been chosen as an Editor's Pick.

May 2022

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  Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate

  1 min read · Mon, May 2 2022

  News

  We demonstrated a high crystalline quality of N-polar InGaN layer grown on ScAlMgO4 substrates by metalorganic vapor-phase epitaxy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O–Sc SAM surface and the (Ga,In) atoms of InGaN.

April 2022

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  Welcome Abraham

  1 min read · Mon, Apr 11 2022

  News

  ​ECO Devices Lab welcomes Abraham Isaac Camelo Guerrero as a Visiting student.

March 2022

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  Paper accepted in IEEE Journal of Lightwave Technology!

  1 min read · Fri, Mar 18 2022

  News

  We demonstrated that the InGaN-based red resonant cavity LEDs exhibited optical resonant effect, a high Q factor (~3010), and a narrow emission linewidth (FMHW ~0.2 nm), indicating low optical loss in the resonant cavity.
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  Congratulations! Selected as “Highlighted talk” at the Spring meeting of Japanese Society of Applied Physics in Spring 2022.

  1 min read · Wed, Mar 9 2022

  News

  Our Scheduled presentation is selected as “Highlighted talk” at the Spring meeting of the Japanese Society of Applied Physics in Spring 2022. Daisuke Iida et al., “” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%.

February 2022

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  Congratulations! Prof. Kazuhiro is appointed a Guest Professor at Xiamen University, China.

  1 min read · Sun, Feb 27 2022

  News

  Prof. Kazuhiro is appointed a Guest Professor at Xiamen University (China) from February 2022.
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  Congratulations! Prof. Kazuhiro is appointed a Visiting Professor at Mie University, Japan.

  1 min read · Sun, Feb 27 2022

  News

  Prof. Kazuhiro is appointed a Visiting Professor at Mie University (Japan) from November 2021.

January 2022

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  Passivation of Surface States in GaN by NiO Particles

  1 min read · Thu, Jan 27 2022

  News

  we characterized the surface states in GaN by EIS analyses and demonstrated that NiO particles deposited directly on GaN passivate them. These surface states are generated by the electronic bindings of superficial Ga atoms, and the interaction of those atoms with NiO modifies its chemical structure, as demonstrated by XPS measurements.
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  Paper accepted in RSC Advances!

  1 min read · Tue, Jan 25 2022

  News

  The paper reports the investigation of the wet electrochemical etching of n-GaN films in oxalic acid. The results of a number of quantitative physicochemical analysis methods of the products indicated a 6-electron nature of the etching reaction and fully revealed the mechanism of EC oxidation of n-GaN, which includes the formation of intermediates formed by adsorption of the solvent on GaN surface. Clear understanding of this reaction creates a solid foundation for the investigation of transformations of more complicated III-nitride systems for low-damage and high-precision processing of nitride-based devices.
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  Study on the effect of size on InGaN red micro-LEDs

  1 min read · Mon, Jan 3 2022

  News

  In this research, five sizes (100 × 100, 75 × 75, 50 × 50, 25 × 25, 10 × 10 μm2) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10 × 10 μm2 micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection.

December 2021

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  Welcome Prof. Ma

  1 min read · Wed, Dec 1 2021

  News

  ​ECO Devices Lab welcomes Bei Ma as a Visiting Faculty. She is an Assistant Professor at Chiba University in Japan.​​​

November 2021

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  Presentations (2016-present)

  1 min read · Thu, Nov 18 2021

  News

  Scheduled Presentations (Invited) SPIE Photonics West, San Francisco, CA, USA, January 22-27, (2022) “InGaN-based RGB micro-LED arrays” K. Ohkawa, Z. Zhuang, D. Iida (Invited) SPIE Photonics West, San Francisco, CA, USA, January 22-27, (2022) “MOVPE-grown InGaN quantum-well red micro-LEDs” K. Ohkawa, D. Iida (Invited) SPIE Photonics West, San Francisco, CA, USA, January 22-27, (2022) “Investigation of red InGaN LEDs from mini to micro chip sizes” R.-H. Horng, D. Iida, K. Ohkawa, Y.-R. Wu, D.-S. Wuu Presentations (Invited) 4 th technical meeting of the Japan Society of Wide Gap Semiconductors

October 2021

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  Join Us

  1 min read · Fri, Oct 29 2021

  News

  About KAUST (King Abdullah University of Science and Technology) KAUST is located on the Red Sea coast in Thuwal, Makkah Province, Saudi Arabia. It takes one hour from the Jeddah international airport to KAUST by car. KAUST is an international graduate-level research university. KAUST is founded in 2009. It is a young university but recognized as a high-level research activity thanks to the cutting-edge research facilities in each lab and Core Laboratories. Students and postdocs at KAUST can use the qualitative machines in the Core labs for material characterization and device fabrication