About Zhe Zhuang Zhe Zhuang Postdoctoral Research Fellow, Electrical and Computer Engineering Research Interests His research interests are in the area of III-nitride semiconductors and their optoelectronic devices, especially MOVPE growth, nanofabrication and novel III-nitride nanophotonics. Articles Related News January 2022 Passivation of Surface States in GaN by NiO Particles 1 min read · Thu, Jan 27 2022 News we characterized the surface states in GaN by EIS analyses and demonstrated that NiO particles deposited directly on GaN passivate them. These surface states are generated by the electronic bindings of superficial Ga atoms, and the interaction of those atoms with NiO modifies its chemical structure, as demonstrated by XPS measurements. Paper accepted in RSC Advances! 1 min read · Tue, Jan 25 2022 News The paper reports the investigation of the wet electrochemical etching of n-GaN films in oxalic acid. The results of a number of quantitative physicochemical analysis methods of the products indicated a 6-electron nature of the etching reaction and fully revealed the mechanism of EC oxidation of n-GaN, which includes the formation of intermediates formed by adsorption of the solvent on GaN surface. Clear understanding of this reaction creates a solid foundation for the investigation of transformations of more complicated III-nitride systems for low-damage and high-precision processing of nitride-based devices. September 2021 Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes 1 min read · Thu, Sep 9 2021 News The paper reports the investigation of the electroluminescence properties of the additional peak in the EL spectrum of InGaN-based red LED structure. These results were helpful for understanding the EL performance of the red InGaN QWs and may be useful as guidelines to improve the quality of high-In-content QWs in the future. August 2021 Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays 1 min read · Mon, Aug 23 2021 News The paper reports the luminescence improvement of InGaN-based red LEDs by introducing a micro-hole array. This technique provides the improvement of the internal quantum efficiency and light extraction efficiency. The InGaN-based red LEDs are very attractive for next-generation micro-LED display, because the material is a family of blue and green LEDs. Paper accepted in Optics Letters! 1 min read · Thu, Aug 19 2021 News The paper reports the new device fabrication for the green micro-LEDs. The micro-LEDs have recently gathered considerable interest for next-generation display applications, such as smartphones and watches, augmented reality (AR), and virtual reality (VR) devices. Top Cited Paper Award (Saudi Arabia) from IOP Publishing 1 min read · Fri, Aug 13 2021 News As one of the most cited articles from Saudi Arabia published across the entire IOP Publishing journal portfolio in 2020, using citations recorded in Web of Science “Demonstration of low forward voltage InGaN-based red LEDs” D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, and K. Ohkawa, Applied Physics Express 13, 031001 (2020). Paper accepted in Japanese Journal of Applied Physics (Invited review)! 1 min read · Mon, Aug 2 2021 News In this paper, we review our recent progress on InGaN-based red LEDs, including the epitaxial structures and device fabrication. We also present the optical performance of InGaN red LEDs with different chip sizes from hundreds to tens of micrometers. July 2021 630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays 1 min read · Tue, Jul 20 2021 News The paper reports InGaN-based RGB micro-LED arrays that comprise every single µLED in the dimension of 17 × 17 µm2. We obtained the output power density of the InGaN-based red µLEDs as 1.76 mW/mm2, which was estimated to be higher than that of 20 × 20 µm2 AlInGaP red µLEDs (~630 nm). The result reveals a great potential for the InGaN materials to be used in full-color micro-displays. May 2021 606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56% 1 min read · Thu, May 13 2021 News The paper reports the device performances of the amber micro-LEDs. The on-wafer external quantum efficiency was as high as 0.56%. The micro-LEDs have recently gathered considerable interest for next-generation display applications, such as smartphones and watches, augmented reality (AR), and virtual reality (VR) devices. Making the shift from blue to red for better LEDs 1 min read · Sun, May 9 2021 News materials science semiconductors electrical engineering Pure red-light micrometer-scale emitting devices made from a nitride semiconductor reaches excellent efficiency. March 2021 Paper accepted in Optics Letters & Ranked in “Top Downloads” during April-June 2021! 1 min read · Fri, Mar 12 2021 News This paper has ranked in "Top Downloads". Congratulations! September 2020 Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes 1 min read · Sat, Sep 19 2020 News The paper entitled "Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes" reports the numerically investigated the performance of N-polar AlGaN-based ultraviolet light-emitting diodes with different Al contents in quantum wells and barriers. Optics Express 28, 30423 (2020). DOI: 10.1364/OE.403168 July 2020 Red-light LEDs for next-generation displays 1 min read · Sun, Jul 5 2020 News LED electrical engineering Novel red LEDs are more temperature stable than those made using the conventional semiconductor of choice.
Passivation of Surface States in GaN by NiO Particles 1 min read · Thu, Jan 27 2022 News we characterized the surface states in GaN by EIS analyses and demonstrated that NiO particles deposited directly on GaN passivate them. These surface states are generated by the electronic bindings of superficial Ga atoms, and the interaction of those atoms with NiO modifies its chemical structure, as demonstrated by XPS measurements.
Paper accepted in RSC Advances! 1 min read · Tue, Jan 25 2022 News The paper reports the investigation of the wet electrochemical etching of n-GaN films in oxalic acid. The results of a number of quantitative physicochemical analysis methods of the products indicated a 6-electron nature of the etching reaction and fully revealed the mechanism of EC oxidation of n-GaN, which includes the formation of intermediates formed by adsorption of the solvent on GaN surface. Clear understanding of this reaction creates a solid foundation for the investigation of transformations of more complicated III-nitride systems for low-damage and high-precision processing of nitride-based devices.
Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes 1 min read · Thu, Sep 9 2021 News The paper reports the investigation of the electroluminescence properties of the additional peak in the EL spectrum of InGaN-based red LED structure. These results were helpful for understanding the EL performance of the red InGaN QWs and may be useful as guidelines to improve the quality of high-In-content QWs in the future.
Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays 1 min read · Mon, Aug 23 2021 News The paper reports the luminescence improvement of InGaN-based red LEDs by introducing a micro-hole array. This technique provides the improvement of the internal quantum efficiency and light extraction efficiency. The InGaN-based red LEDs are very attractive for next-generation micro-LED display, because the material is a family of blue and green LEDs.
Paper accepted in Optics Letters! 1 min read · Thu, Aug 19 2021 News The paper reports the new device fabrication for the green micro-LEDs. The micro-LEDs have recently gathered considerable interest for next-generation display applications, such as smartphones and watches, augmented reality (AR), and virtual reality (VR) devices.
Top Cited Paper Award (Saudi Arabia) from IOP Publishing 1 min read · Fri, Aug 13 2021 News As one of the most cited articles from Saudi Arabia published across the entire IOP Publishing journal portfolio in 2020, using citations recorded in Web of Science “Demonstration of low forward voltage InGaN-based red LEDs” D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, and K. Ohkawa, Applied Physics Express 13, 031001 (2020).
Paper accepted in Japanese Journal of Applied Physics (Invited review)! 1 min read · Mon, Aug 2 2021 News In this paper, we review our recent progress on InGaN-based red LEDs, including the epitaxial structures and device fabrication. We also present the optical performance of InGaN red LEDs with different chip sizes from hundreds to tens of micrometers.
630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays 1 min read · Tue, Jul 20 2021 News The paper reports InGaN-based RGB micro-LED arrays that comprise every single µLED in the dimension of 17 × 17 µm2. We obtained the output power density of the InGaN-based red µLEDs as 1.76 mW/mm2, which was estimated to be higher than that of 20 × 20 µm2 AlInGaP red µLEDs (~630 nm). The result reveals a great potential for the InGaN materials to be used in full-color micro-displays.
606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56% 1 min read · Thu, May 13 2021 News The paper reports the device performances of the amber micro-LEDs. The on-wafer external quantum efficiency was as high as 0.56%. The micro-LEDs have recently gathered considerable interest for next-generation display applications, such as smartphones and watches, augmented reality (AR), and virtual reality (VR) devices.
Making the shift from blue to red for better LEDs 1 min read · Sun, May 9 2021 News materials science semiconductors electrical engineering Pure red-light micrometer-scale emitting devices made from a nitride semiconductor reaches excellent efficiency.
Paper accepted in Optics Letters & Ranked in “Top Downloads” during April-June 2021! 1 min read · Fri, Mar 12 2021 News This paper has ranked in "Top Downloads". Congratulations!
Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes 1 min read · Sat, Sep 19 2020 News The paper entitled "Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes" reports the numerically investigated the performance of N-polar AlGaN-based ultraviolet light-emitting diodes with different Al contents in quantum wells and barriers. Optics Express 28, 30423 (2020). DOI: 10.1364/OE.403168
Red-light LEDs for next-generation displays 1 min read · Sun, Jul 5 2020 News LED electrical engineering Novel red LEDs are more temperature stable than those made using the conventional semiconductor of choice.
