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Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes
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The paper entitled "Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes" reports the numerically investigated the performance of N-polar AlGaN-based ultraviolet light-emitting diodes with different Al contents in quantum wells and barriers.
Optics Express 28, 30423 (2020). DOI: 10.1364/OE.403168