Paper accepted in Japanese Journal of Applied Physics (Invited review)!
In this paper, we review our recent progress on InGaN-based red LEDs, including the epitaxial structures and device fabrication. We also present the optical performance of InGaN red LEDs with different chip sizes from hundreds to tens of micrometers.
About
InGaN-based light-emitting diodes (LEDs) are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs, including the epitaxial structures and device fabrication. We also present the optical performance of InGaN red LEDs with different chip sizes from hundreds to tens of micrometers.
Related People
Related Researchers
Daisuke Iida
- Senior Research Scientist, Electrical and Computer Engineering
Zhe Zhuang
- Postdoctoral Research Fellow, Electrical and Computer Engineering