News Article Content - (6)

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6 (3) | A (9) | C (12) | D (4) | E (7) | F (1) | G (6) | H (3) | I (8) | J (1) | K (6) | L (4) | M (8) | O (5) | P (47) | R (3) | S (8) | T (3) | V (3) | W (11)

	606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56% (News)	News
	630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays (News)	News
	633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress (News)	News