633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
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The paper entitled "633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress" reports the reduction of the in-plane compressive stress in the underlying GaN layers was shown to be crucial for enhancing the light-output power of InGaN-based red LEDs on conventional sapphire substrates. Appl. Phys. Lett. 116, 162101 (2020). DOI: 10.1063/1.5142538