High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits
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The paper entitled "High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits" reports the growth of phosphor-free InGaN-based white light-emitting diodes by metalorganic vapor-phase epitaxy. Appl. Phys. Lett. 117, 172103 (2020). DOI: 10.1063/5.0026017
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Daisuke Iida
- Senior Research Scientist, Electrical and Computer Engineering