Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys
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The paper entitled “Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys” will inspire InGaN MOVPE growth and their LED applications. DOI: 10.1016/j.jcrysgro.2019.02.018