Publication list

 

193. "Efficiency enhancement of InGaN amber MQWs using nanopillar structures "

         Y. Ou, D. Iida, J. Liu, K. Wu, K. Ohkawa, A. Boisen, P. M. Petersen, H. Ou 

         Nanophotonics 7, pp.317-312 (2018).

 

192. “Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure”

         D. Iida, K. Niwa, S. Kamiyama, K. Ohkawa

         Applied Physics Express 9, 111003 (2016).

 

191. “Wireless InGaN-Si/Pt device for photo-electrochemical water splitting”

         T. Sekimoto, H. Hashiba, S. Shinagawa, Y. Uetake, M. Deguchi, S. Yotsuhashi, K. Ohkawa 

         Japanese Journal of Applied Physics 55, 088004, pp.1-3 (2016).  

 

190. “Analysis of Products from Photoelectrochemical Reduction of 13CO2 by GaN-Si Based Tandem Photoelectrode”
         T. Sekimoto, H. Hashiba, S. Shinagawa, Y. Uetake, M. Deguchi, S. Yotsuhashi, K. Ohkawa
         The Journal of Physical Chemistry, 120, pp.13970-13975 (2016).

189. “
有機金属気相エピタキシャル成長法(実践編)
        
大川 和宏
        
応用物理学会結晶工学分科会結晶工学スクールテキスト13, pp.1-12 (2016).

188. “Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers”
         D. Iida, S. Lu, S. Hirahara, K. Niwa, S. Kamiyama, K. Ohkawa
         Journal of Crystal Growth 448, pp.105-108
2016.

187. “Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells”
         D. Iida, S. Lu, S. Hirahara, K. Niwa, S. Kamiyama, K. Ohkawa
         Japanese Journal of Applied Physics 52, 08JB13pp.1-3(2016).

186. “
無機触媒による人工光合成および二酸化炭素還元
        
四橋聡史、関本健之、羽柴寛、野田慶一、岡本慎也、出口正洋、大川和宏
        
太陽エネルギー(Journal of JSES), 41, pp.29-35 (2015). 

185. “ Nitride Photocatalyst to Produce Clean Hydrogen from Water without Extra Bias”
         K. Ohkawa
         ECS Transactions, 66 , pp.135-138 (2015). 

184. “Effects of intentional oxygen and carbon doping in MOVPE-grown GaN layers on photoelectric Properties”
        Y. Wang, T. Teramoto, K. Ohkawa
        physica status solidi (b) 252, pp.1116-1120 (2015).

183. “The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE”
         Y. Wang, R. Shimma, T. Yamamoto, H. Hayashi, K. Shiohama, K. Kurihara, R. Hasegawa, K. Ohkawa
         Journal of Crystal Growth 416 , pp.164-168 (2015).

182. “InGaN photocatalysts on conductive Ga2O3 substrates”
         T. Ogita, Y. Uetake, Y. Yamashita, A. Kuramata, S. Yamakoshi, K. Ohkawa
         physica status solidi (a) 212, pp.1029-1032 (2015). 

181. “Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological              photosynthesis”
         T. Sekimoto, S. Shinagawa, Y. Uetake, K. Node, M. Deguchi, S. Yotsuhashi, K. Ohkawa
         Applied Physics Letters 106, 073902, pp.1-4 (2015).

180. “Photoelectrochemical CO2 Conversion to Hydrocarbons Using an AlGaN/GaN-Si Tandem Photoelectrode”
         M. Deguchi, S. Yotsuhashi, Y. Yamada, K. Ohkawa 
         Advances in Condensed Matter Physics 2015, 537860, pp.1-4 (2015).

179. “
炭化水素生成に向けた人工光合成装置の開発
         
四橋聡史、出口正洋、山田由佳、大川和宏
         
光合成研究と産業応用最前線 2編第4章第1, pp.293-298 (2014). 

178. “Blue LEDs: Helping to Save Earth”
         K. Ohkawa 
         A Journal of the Association of Asia Pacific Physical Societies (AAPPS Bulletin), vol. 24, No.6, pp.11-13 (2014).

177. “
窒化ガリウム光電極を用いた水と二酸化窒素からの有機物合成
        
四橋聡史、出口正洋、羽柴寛、山田由佳、大川和宏
         
水素エネルギーシステム vol. 39 No.1, pp.17-23 (2014).

176. “
窒化物半導体を用いた人工光合成システムの開発
        
羽柴寛、四橋聡史、出口正洋、山田由佳、大川和宏
         FC Report(
日本ファインセラミック協会 会報)32 3, pp.115-118 (2014). 

175. “
赤色LEDとそのInGaN発光層のMOVPE成長
         
大川和宏
         
光電相互変換第125委員会 本委員会第225回研究会 JPC産業用LED応用研究会「20147月定例会」pp.5-10 (2014).

174. “Influence of working pressure on the crystal structural and photo-magneto-electric properties of TiO2 thin films”
         Y. Wang, Z. Pei, T. Li, J. Xu, X. Zhao, K. Ohkawa 
         Journal of Optoelectronics
Laser vol. 24(6), pp.1110-1115 (2013).

173. “Effect of inserted Si p-n junction on GaN-based photo-electrochemical CO2 conversion system”
         S. Yotsuhashi, M. Deguchi, Y. Yamada, K. Ohkawa 
         AIP Advances 4, 067135 pp.1-8 (2014).

172. “
人工光合成による炭化水素生成システム
         
四橋聡史、出口正洋、山田由佳、大川和宏
         
光アライアンス 43 6, pp.272-274 (2014). 

171. “
窒化物半導体を用いた人工光合成システム
         
四橋聡史、出口正洋、羽柴寛、山田由佳、大川和宏
         
光学 43 6, pp.272-274 (2014). 

170. “
安全・安心な元素からなる人に優しいLED”
         
大川和宏
         
理大 科学フォーラム 356, pp.30-31 (2014). (20142月号).

169. “MOVPE
成長高In組成InGaN/InGaN多重量子井戸構造の発光スペクトルの温度依存性及び励起スペクトル
         
長澤和輝、宮島顕祐、大川和宏
         
24回光物性研究会 (2013).

168.

167. “
窒化物半導体を光電極にした人工光合成
         
四橋聡史、出口正洋、羽柴寛、山田由佳、大川和宏
         MATERIAL STAGE vol. 13, No.5, pp.1-4 (2013). 

166. “Selectivity Control of CO2 Reduction in an Inorganic Artificial Photosynthesis System”
         H. Hashiba, S. Yotsuhashi, M. Deguchi,  Y. Yamada, K. Ohkawa 
         Applied Physics Express 6, 097102 pp.1-4 (2013). 

165. “Enhanced Capability of Photoelectrochemical CO2 Conversion System Using an AlGaN/GaN Photoelectrode”
         M. Deguchi, S. Yotsuhashi, H. Hashiba, Y. Yamada, K. Ohkawa 
         Japanese Journal of Applied Physics 52, 08JF07 pp.1-5 (2013).

164. “Highly stable GaN photocatalyst for producing H2 gas from water”
         K. Ohkawa, W. Ohara, D. Uchida, 
et al.
         Japanese Journal of Applied Physics 52, 08JH04 pp.1-3 (2013).

163. “
窒化物光触媒による高効率水素生成
         
大川和宏
         JILS
平成23年度第3回懇談会 JILS Newsletter 70 pp.1-9 (2013).

162. “
ワイドギャップ半導体 あけぼのから最前線へ(監修 吉川明彦)の第6章4節「窒化物半導体の光触媒機能     と水素エネルギー生成への応用」
         
大川和宏
         
培風館、pp.374-382 (2013).

161. “
光半導体による人工光合成
         
大川和宏
         
日本学術振興会 薄膜第131委員会 263回研究会 (2012) pp.31-38 (2012).

160. “Highly efficient photochemical HCOOH production from CO2 and water using an inorganic system”
         S. Yotsuhashi, H. Hashiba, M. Deguchi, Y. Zenitani, R. Hinogami, Y. Yamada, K. Ohkawa, 
et al.
         AIP Advances 2, 042160, pp.1-5 (2012).

159. “Hydrogen Generation for 500 hours by Photoelectrolysis of Water using GaN”
         W. Ohara, D. Uchida, T. Hayashi, K. Ohkawa, 
et al.
         Materials Research Society Symposium proceedings 1446, pp.1-5 (2012).

158. “High Stability and Efficiency of GaN Photocatalyst for Hydrogen Generation from Water”
         T. Hayashi, K. Ohkawa
et al.
         Japanese Journal of Applied Physics 51, 112601 pp.1-3 (2012).

157.“OPTOELECTRONICS 2011(
平成23)年度 光産業技術に関する報告書 光技術動向調査” 1.4 可視~紫外域 GaN系光触     媒」 

       大川和宏

       一般財団法人光産業技術振興協会、pp. 42-45 (2012).

156. “MOVPE
成長におけるIn組成制御と全可視域InGaNLEDの実現
         
大川和宏, 他
         
応用電子物性分科会会誌 18-2, pp.57-60 (2012).

155. “Enhanced CO2 reduction capability in an AlGaN/GaN photoelectrode”
         S. Yotsuhashi, M. Deguchi, H. Hashiba, Y. Zenitani, R. Hinogami, Y. Yamada, K. Ohkawa
         Applied Physics Letters 100, 243904 pp.1-3 (2012).

154. “740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE”
        K. Ohkawa, T. Watanabe, M. Sakamoto, A. Hirako
et al.
        Journal of Crystal Growth 343, pp.13-16 (2012).

153. “CO2 conversion with light and water by GaN photoelectrode”
        S. Yotsuhashi, M. Deguchi, Y. Zenitani, R. Hinogami, H. Hashiba, Y. Yamada, K. Ohkawa 
        Japanese Journal of Applied Physics 51, 02BP07 pp.1-3 (2012).

152. “Photo-induced CO2 reduction with GaN electrode in Aqueous System”
        S. Yotsuhashi, M. Deguchi, Y. Zenitani, R. Hinogami, H. Hashiba, Y. Yamada, K. Ohkawa
        Applied Physics Express 4, 117101pp.1-3 (2011).

151. “MOVPE
成長InGaNLEDの長波長化
       
大川和宏
       
ワイドキャップ半導体光・電子デバイス第162委員会 75回研究会資料, 40-45 (2011).

150. “Photoelectrochemical Properties of the p-n Junction in and near the Surface Depletion Region of n-Type GaN” 
        K. Fujii, M. Ono, Y. Iwaki, K. Sato, K. Ohkawa, and T. Yao  
        Journal of Physical Chemistry C 114, 22727-22735 (2010). 

149.“
有機金属気相エピタキシャル成長法(実践編)
       
大川和宏
       
応用物理学会結晶工学分科会結晶工学スクールテキスト第10, pp.35-45 (2010).

148.“Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation”
        K. Nakamura, A. Hirako, K. Ohkawa
        physica status solidi (c) 7, pp.2268-2271 (2010).

147.“Electrooptic Effect of Water in Electric Double Layer at Interface of GaN Electrode”
        H. Kanemaru, Y. Nosaka, A. Hirako, K. Ohkawa, T. Kobayashi, E. Tokunaga
        Optical Review 17, pp.352-356 (2010).

146.“
交互供給AlN-MOVPE 成長における気相種の熱化学流体解析
       
中村健一, 平子晃, 大川和宏
       
日本材料学会半導体エレクトロニクス部門 平成21年度第1回研究会, (2009).

145.“
窒化物半導体MOVPE成長の熱化学流体シミュレーション
       
大川和宏, 平子晃
       
ワイドギャップ半導体光・電子デバイス第162委員会/結晶成長の科学と技術第161委員 合同研究会資料, pp.19-24 (2009).

144.“Growth behavior of AlInGaN films”

        J. Z. Shang, B. P. Zhang, M. H. Mao, L. E. Cai, J. Y. Zhang, Z. L. Fang, B. L. Liu, J. Z. Yu, Q. M. Wang, K. Kusakabe, K. Ohkawa

        Journal of Crystal Growth 311, pp.474-477 (2009).


143.“Nitride photocatalyst to generate hydrogen gas from water”
        Y. Iwaki, M. Ono, K. Yamaguchi, K. Kusakabe, K. Fujii ,K. Ohkawa
        physica status solidi (c) 5, pp.2349-2351 (2008).

142.“Photoelectrochemical H2 Gas Generation Improvement with Thin p-type GaN Layer on n-type GaN”
        K. Fujii, M. Ono, Y. Iwaki, T. Yao, K. Ohkawa
        ECS Transactions 13, pp.177-183 (2008).

141.“Direct Observation of an Ordered Phase in (11-20) Plane InGaN Alloy”
        K. Kusakabe, T. Yamazaki, K. Kuramochi, T. Furuzuki, I. Hashimoto, S. Ando, and K. Ohkawa
        Japanese Journal of Applied Physics 47, pp.8783-8786 (2008).

140.“MOVPE
法によるAlGaN結晶成長の熱流体計算解析
        
平子晃 市川晶也 中村健一 大川和宏
       
信学技報 108 321, pp.89-92 (2008).

139.“
発光と受光の物理と応用(監修 小林洋志)
       
86窒化物光触媒
       
大川和宏 
       
培風館, pp.342-348 (2008).

138.“An orthogonal surface phase in semipolar GaN/r-plane sapphire”
        K. Kusakabe, D. Terui, T. Yamazaki, I. Hashimoto, and K. Ohkawa
        Applied Physics Letters 92, 171912 pp.1-3 (2008).

137.“
窒化物光触媒による水素発生
       
大川和宏
       
工業材料 vol. 55, No.12, pp.69-71 (2007).

136.“Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces”
        T. Kondo, H. Ito, K. Kusakabe, K. Ohkawa, K. Honda, Y. Einaga, A. Fujishima, T. Kawai
        Diamond & Related Materials 17, pp.48-54 (2008).

135.“Photoelectrochemical Properties of Nonpolar and Semipolar GaN”
        K. Fujii, Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, S. Nakamura, K. Ohkawa
        Japanese Journal of Applied Physics 46, pp.6573-6578 (2007).

134.“
水素利用技術集成 Vl. 3
       
35窒化物光触媒による水素製造技術
    大川和宏
       
エヌ・ティー・エス, pp.240-248 (2007).

133.“Wide Bandgap Semiconductors” (edited by K. Takahashi, A. Yoshikawa and A. Sandhu) section 5.2.3 “Nitride Phtocatalysis”
        K. Ohkawa
        Springer, pp.311-327 (2007).

132.“
窒化物光触媒による水素エネルギー製造
       
大川和宏
       
マテリアルライフ学会誌 19, pp.67-71 (2007).

131.“Large misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy”
        K. Kusakabe, S. Ando, K. Ohkawa
        Journal of Crystal Growth 298, pp.293-296 (2007).

130.“Influence of Polymer Formation on Metalorganic Vapor-Phase Epitaxial Growth of AlN”
         T. Uchida, K. Kusakabe, K. Ohkawa
         Journal of Crystal Growth 304, pp.133-140 (2007).

129.“Plasma etching treatment for surface modification of boron-doped diamond electrodes”
        T. Kondo, H. Ito, K. Kusakabe, K. Ohkawa, Y. Einaga, A. Fujishima, T. Kawai
        Electrochimica acta 52, pp.3841-3848 (2007).

128.“Photoelectrochemical Reactions and H2 Generation at Zero Bias Optimized by Carrier Concentration of n-Type GaN”
        M. Ono, K. Fujii, T. Ito, Y. Iwaki, A. Hirako, T. Yao, K. Ohkawa
        Journal of Chemical Physics 126, 054708 pp.1-7 (2007).

127.“Investigation of Surface Morphology of n-type GaN after Photoelectrochemical Reaction in Various Solutions for H2 Gas Generation”
        K. Fujii, T. Ito, M. Ono, Y. Iwaki, T. Yao, K. Ohkawa
        physica status solidi (c) 4, pp.2650-2653 (2007).

126.“Cathodoluminescence characterization of (11-20)-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy ”
        K. Kusakabe, T. Furuzuki, K. Ohkawa
        physica status solidi (c) 4, pp.2544-2547 (2007).

125.“Band-edge Energies and Photoelectrochemical Properties of n-Type AlxGa1-xN and InyGa1-yN alloys”
        K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, K. Ohkawa
        Journal of the Electrochemical Society 154 (2), pp.B175-B179 (2007).

124.“Fabrication and optical properties of blue LEDs with silica microsphere coating”
        K. Kusakabe, S. Funazaki, K. Okamoto, S. Nishizawa, K. Ohkawa
        physica status solidi (c) 4, pp.25-28 (2007).

123.“
窒化物半導体を用いた水からの水素発生
        
藤井克司大川和宏
       
日本学術振興会 光電相互変換 125委員会 194回研究会資料 pp.10-13 (2006).

122.“
エレクトロニクス分野における熱制御、放熱・冷却技術[下巻](監修 石塚勝 渡辺聡志) 
       
第7節[1]熱化学流体シミュレーションによる窒化物半導体成長の解析
       
大川和宏
       
技術情報協会 pp. 205-214 (2006).

121.“
窒化物光触媒
        
大川和宏
       
会報 光触媒 (光機能材料研究会)20, pp.14-17 (2006).
        
120.“
窒化物光触媒による水素発生
        
大川和宏, 藤井克司
       
日本学術振興会 ワイドギャップ半導体光・電子デバイス 162委員会 46回研究会資 pp.9-15 (2006).
        
119.“Characterization of lattice mosaic of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy”
        K. Kusakabe, S. Ando, K. Ohkawa
        Materials Research Society Symposium proceedings 892, pp.658-663 (2006).

118.“Charge transfer of n-type GaN photoelectrolysis in HCl solution for H2 gas generation at a counterelectrode”
        K. Fujii, M. Ono, T. Ito, K. Ohkawa
        Material Research Society Symposium Proceedings 0885-A11-04.1
04.6 (2006).

117.“
有機金属気相エピタキシー法におけるGaN薄膜の成長シミュレーション
        
大川和宏 平子晃 徳田耕太
        
真空 49, pp.520-524 (2006).

116.“Analysis of TMGa/NH3/H2 reaction system in GaN-MOVPE growth computational simulation”
        A. Hirako, S. Koiso, K. Ohkawa
        physica status solidi (a) 203, pp.1716-1719 (2006).

115.“Hydrogen generation from aqueous water using n-GaN by photoassisted electrolysis”
        K. Fujii, K. Ohkawa
        physica status solidi (c) 3, pp.2270-2273 (2006).

114.“Morphological evaluation of epitaxial GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy”
        K. Kusakabe, K. Ohkawa
        physica status solidi (c)  3, pp.1807-1810 (2006).

113.“Local structural characterization of epitaxial a-plane InGaN/GaN thin films by transmission electron microscopy”
        T. Yamazaki, K. Kusakabe, N. Nakanishi, K. Ohkawa, I. Hashimoto
        physica status solidi (c)  3, pp.1738-1741 (2006).

112.“In concentration and tilt of the a-plane (11-20) InGaN/GaN film by TEM analysis”
        N. Nakanishi, K. Kusakabe, T. Yamazaki, K. Ohkawa, I. Hashimoto
        Physica B  376,  pp.527-531 (2006).

111.“Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy”
        K. Kusakabe, T. Furuzuki, K. Ohkawa
        Physica B  376,  pp.520-522 (2006).

110.“
窒化物光触媒による水からの水素発生
       
大川和宏
       
機能材料 26 5, pp.55-61 (2006).

109.“Formation of polymers in TMGa/NH3/H2 system under GaN growth”
         A. Hirako, K. Ohkawa
         Journal of Crystal Growth 289, pp.428-432 (2006).

108.“Bias-assisted H2 gas generation in HCl and KOH solutions using n-type GaN photoelectrode”
         K. Fujii, K. Ohkawa
         Journal of the Electrochemical Society 153, pp.A468-A471 (2006).

107.“Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy”
         K. Kusakabe, K. Ohkawa
         Japanese Journal of Applied Physics 44, pp.7931-7933 (2005).”

106.“
窒化物半導体を用いた光電気化学反応による水素生成
       
藤井克司 小野雅人 伊藤高志 岩城安浩 大川和宏
       
信学技報 105 326, pp.47-52 (2005).

105.“Photoelectrochemical properties of InGaN for H2 generation from aqueous water”
         K. Fujii, K. Kusakabe, K. Ohkawa
         Japanese Journal of Applied Physics 44, pp.7433-7435 (2005).

104.“Photoelectrochemical properties of p-type GaN in comparison with n-type GaN ”
         K. Fujii, K. Ohkawa
         Japanese Journal of Applied Physics 44, pp.L909-L911 (2005).

103.“GaN-MOVPE
成長における化学反応経路の熱流体計算解析 TMGa/NH3/H2系での化学反応について-
       
平子晃 小磯沙織 草部一秀 大川和宏
       
信学技報 105 90, pp.85-89 (2005).

102.“GaN
を用いた水の光電気分解デバイス GaNの光電気化学-
       
藤井克司 大川和宏
       
信学技報 105 90, pp.63-68 (2005).

101.“Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation ”
        K. Fujii, T. Karasawa, K. Ohkawa
        Japanese Journal of Applied Physics 44, pp.L543-L545 (2005).

 

100.“Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state”
        A. Hirako, K. Ohkawa
        Journal of Crystal Growth 276, pp.57-63 (2005).

99.“Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system: a computational fluid dynamics simulation study”
      A. Hirako, K. Kusakabe, K. Ohkawa
      Japanese Journal of Applied Physics 44, pp.874-879 (2005).

98.“Impurity doping effect on thermal stability of InGaN/GaN multiple quantum-well structures”
      K. Kusakabe, T. Hara, K. Ohkawa
      Journal of Applied Physics 97, 043503 pp.1-3 (2005).

97.“Computational fluid dynamics on gaseous and surface chemistry of GaN-MOVPE system for various pressures”
      K. Kusakabe, A. Hirako, S. Tanaka, K. Ohkawa
      physica status solidi (c) 1, pp.2569-2572 (2004).

96.“
照明の新時代
      
大川和宏
      
理大 科学フォーラム, pp.6-10 (2004). (200410月号)

95.“Energy renormalization and binding energy of the biexciton”
      M. Maute, S. Wachter, H. Kalt, K. Ohkawa, D. Hommel
      Physical Review B 67, 165323 pp.1-4 (2003).

94.“Characterization of InGaN/GaN Fibonacci superlattices grown by two-flow metalorganic vapor phase epitaxy”
      K. Kusakabe, K. Ohkawa
      physica status solidi (c) 0, pp.2120-2123 (2003).

93.“X-ray diffraction study of InGaN/GaN superlattice interfaces”
      K. Kusakabe, K. Ohkawa
      Journal of Vacuum Science & Technology B 21, pp.1839-1843 (2003).

92.“Spatiotemporal dynamics of quantum-well excitons”
      H. Zhao, B. Dal Don, S. Moehl, H. Kalt, K. Ohkawa, D. Hommel
      Physical Review B 67, 035306 pp.1-7 (2003).

91.“Decomposition and uniformity of material gases in GaN MOVPE” 
      A. Hirako, K. Ohkawa
      physica status solidi (a) 194, pp.489-493 (2002).

90.“Midinfrared pump-probe reflection spectroscopy of the coupled phonon-plasmon mode in GaN”
      M. Nagai, K. Ohkawa, M. Kuwata-Gonokami
      Applied Physics Letters 81, pp.484-486 (2002).

89.“GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis”
      A. Hirako, M. Yoshitani, M. Nishibayashi, Y. Nishikawa, K. Ohkawa
      Journal of Crystal Growth 237, pp.931-935 (2002).

88.“Instability of Cl-related deep defects in ZnSe”
      Y. Harada, H. Nakata, T. Ohyama, K. Ohkawa, M. Isshiki
      Japanese Journal of Applied Physics 41, pp.514-517 (2002).

87.“Displaced substitutional phosphorus acceptors in zinc selenide”
      D. Wolverson, J. J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel,K. Ohkawa, E. Tournie,  J. - P. Faurie
      physica status solidi (b) 229, pp.257-260 (2002).

86.“Growth of GaN layers by one-, two-, and three-flow metalorganic vapor phase epitaxy”
      K. Ohkawa, A. Hirako, M. Yoshitani
      physica status solidi (a) 188, pp.621-624 (2001).

85.“Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe”
      J. J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel, E. Tournie, J. - P. Faurie
      Physical Review B 64, 205206 pp.1-5 (2001).

84.“Spin-dependent exciton-exciton interaction in ZnSe quantum wells”
      D. Troendle, S. Wachter, D. Lueerssen, H. Kalt, I. J. Blewett, I. Galbraith, K. Ohkawa,  D. Hommel
      physica status solidi (a) 178, pp.535-538 (2000).

83.“Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells”
      D. Lueerssen, R. Bleher, H. Kalt, H. Richter, T. Schimmel, A. Rosenauer, D. Litvinov,A. Kamilli, D. Gerthsen, B. Jobst, K. Ohkawa, D. Hommel
      physica status solidi (a) 178, pp.189-192 (2000).

82.“Gigantic reflectance anisotropy of the [110] face of cubic ZnSe in the excitonic part of the spectrum”
      G. Mohs, S. Dhanjal, T. Kise, M. Shirane, R. Shimano, Yu. P. Svirko, K. Ohkawa, N. I. Zheludev, M. Kuwata-Gonokami
      Journal of the Physical Society of Japan 69, pp.3458-3461 (2000).

81.“Internal photoluminescence in ZnSe homoepitaxy and application in blue-green-orange mixed-color light-emitting diodes”
      H. Wenisch, M. Fehrer, M. Klude, K. Ohkawa, D. Hommel
      Journal of Crystal Growth 214, pp.1075-1079 (2000).

80.“Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells”
      D. Lueerssen, R. Bleher, H. Kalt, H. Richter, Th. Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen,  B. Jobst, K.             Ohkawa, D. Hommel
      Journal of Crystal Growth 214, pp.634-638 (2000).

79.“Relation between spin and momentum relaxation in ZnSe/ZnMaSSe quantum wells”
      D. Haegele, M. Oestreich, W. W. Ruehle, J. Hoffmann, S. Wachter, H. Kalt, K. Ohkawa, D. Hommel
      Physica B 272, pp.338-340 (1999).

78.“Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures”
      D. Lueerssen, R. Bleher, H. Richter, Th. Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, D. Hommel
      Applied Physics Letters 75, pp.3944-3946 (1999).

77.“Electron-phonon quantum kinetics in the strong coupling regime”
      D.Steinbach, G. Kocherscheidt, M. U. Wehner, H. Kalt, M. Wegener, K. Ohkawa, D. Hommel
      Journal of Luminescence 83-84, pp.155-160 (1999).

76.“Electron-phonon quantum kinetics in the strong-coupling regime”
     D. Steinbach, G. Kocherscheidt, M. U. Wehner, H. Kalt, M. Wegener, K. Ohkawa, D. Hommel, V. M. Axt
      Physical Review B 60, pp.12079-12090 (1999).

75.“Device properties of homo- and heteroepitaxial ZnSe-based laser diodes”
      H. Wenisch, M. Behringer, M. Fehrer, M. Klude, A. Isemann, K. Ohkawa, D. Hommel
      Japanese Journal of Applied Physics 38, pp.2590-2597 (1999).

74.“Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates” 
      H. Wenisch, M. Fehrer, M. Klude, A. Isemann, V. Grossmann, H. Heinke, K. Ohkawa,D. Hommel, M. Prokesch,  U. Rinas, H. Hartmann
      Journal of Crystal Growth, 201, pp.933-937 (1999).

73.“Growth and Characterization of II-VI Semiconductor Lasers”
      M. Behringer, H. Wenisch, M. Fehrer, V. Gros mann, A. Isemann, M. Klude, H. Heinke, K. Ohkawa, D. Hommel
      Festkoerperprobleme/Advances in Solid State Physics 38, pp.47-60 (1998).

72.“Measurements of the absolute external luminescence quantum efficiency in ZnSe/ZnMgSSe multiple quantum wells as a function of temperature”
      R. Westphaeling, P. Ullrich, J. Hoffmann, H. Kalt, C. Klingshirn, K. Ohkawa, D. Hommel
      Journal of Applied Physics 84, pp.6871-6876 (1998).

71.“Migration enhanced epitaxy of CdSe islands on ZnSe and their optical and structural characterization”
      K. Leonardi,  K. Ohkawa, D. Hommel, H. Selke, F. Gindele and U. Woggon
      Microelectronic Engineering 43/44, pp.701-705 (1998). 

70.“Optical detection of crystallographic domains in zinc-blende crystals”
      G. Mohs, R. Shimano, T. Kise, M. Shirane, M. Kuwata-Gonokami, K. Ohkawa
      Applied Physics Letters 73, pp.1511-1513 (1998).

69.“Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates”
      H. Wenisch, K. Ohkawa, A. Isemann, M. Fehrer, D. Hommel
      Electronics Letters 34, pp.891-892 (1998).

68.“Comparison of long-time delay in lasing in homo- and heteroepitaxially grown II-VI laser diodes”
      A. Isemann, M. Behringer, H. Wenisch, M. Fehrer, K. Ohkawa, D. Hommel
      Acta Physica Polonica A 94, pp.355-360 (1998).

67.“Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes”
      M. Behringer, K. Ohkawa, M. Fehrer, V. Grossmann, H. Heinke, D. Hommel, M. Kuttler, M. Strassburg,  D. Bimberg
      Journal of Crystal Growth 184, pp.580-584 (1998).

66.“Formation of self-assembling II-VI semiconductor nanostructures during migration enhanced epitaxy”
      K. Leonardi, H. Heinke, K. Ohkawa, D. Hommel, H. Selke, F. Gindele, U. Woggon
      Journal of Crystal Growth 184, pp.259-263 (1998).

65.“Exciton localisation in CdSe islands buried in a quantum well of Zn1-XCdXSe”
      F. Gindele,  U. Woggon, W. Langbein, J. Hvam, K. Leonardi, K. Ohkawa, D. Hommel
      Journal of Crystal Growth 184, pp.306-310 (1998).

64.“Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates”
      H. Wenisch, M. Fehrer, K. Ohkawa, D. Hommel, M. Prokesch, U. Rinas, H. Hartmann
      Journal of Applied Physics 82, pp.4690-4692 (1997).

63.“CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: structural and optical investigations”
      K. Leonardi, H. Heinke,  K. Ohkawa, D. Hommel, H. Selke, F. Gindele, U. Woggon
      Applied Physics Letters 71, pp.1510-1512 (1997).

62.“CdSe/ZnSe quantum dot structures: structural and optical investigation”
      D. Hommel, K. Leonardi, H. Heinke, H. Selke, K. Ohkawa, F. Gindele, U. Woggon
      physica status solidi (b) 202, pp.835-843 (1997).

61.“ZnSe-based laser diodes and LEDs grown on ZnSe and GaAs substrates”
      K. Ohkawa, M. Behringer, H. Wenisch, M. Fehrer, B. Jobst, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg, G. Bacher,

      D. Toennies and A. Forchel
      physica status solidi (b) 202, pp.683-693 (1997).

60.“Real-index guided blue-green laser diode with small beam astigmatism fabricated using  ZnO buried structure”
      T. Yokogawa, S. Kamiyama, S. Yoshii, K. Ohkawa, A. Tsujimura, Y. Sasai
      Japanese Journal of Applied Physics 35, pp.L314-L316 (1996).

59.“Compound source molecular beam epitaxy for II-VI laser structures”
      K. Ohkawa, A. Tsujimura, T. Nishikawa, S. Yoshii, T. Yokogawa, M.Kubo, Y. Sasai
      Journal of Crystal Growth 159, pp.632-635 (1996).

58.“
窒素ラジカルドーピング法
      
大川和 
      
応用物理 vol. 64, No.7, pp.715-716 (1995.

57.“
青色半導体レーザー
      
大川和宏
      
電気通信5 vol. 58, pp.24-28, (1995.

56.“
酸素イオン注入によるII-VI族青緑色レーザ
      
吉井重雄, 横川俊哉, 大川和宏, 辻村歩, 佐々井洋一
      
信学技報 Vol. 95, pp.25-30 (1995).

55.“
ワイドギャップ-族半導体へのドーピング
     
大川和宏
      
ニューダイヤモンドフォーラム, JNDF - TX分科 - ’95 -, pp.1-6 (1995).

54.“
族半導体のMBE成長とドーピング
      
辻村歩, 大川和宏, 佐々井洋一, 三露常男
      
応用物理学会 結晶工学分科会第103回研究会,pp.21-26 (1995).

53.“Compound-source MBE for ZnSe-based lasers”
      K. Ohkawa, H. Takeishi, S. Hayashi, S. Yoshii, A. Tsujimura, T.Karasawa, T. Mitsuyu
      physica status solidi (b) 187, pp.291-296 (1995).

52.“Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe”
      T. Saiki, M. Kuwata-Gonokami, K. Ohkawa, T. Mitsuyu
      Solid State Communication 95, pp.679-683 (1995).

51.“Compound-source molecular beam epitaxy for ZnCdSe/ZnSSe/ZnMgSSe laser structure”
      K. Ohkawa, S. Yoshii, H. Takeishi, A. Tsujimura, S. Hayashi, T.Karasawa, T. Mitsuyu
      Japanese Journal of Applied Physics 33, pp.L1673-L1675 (1994).

50.“Spin-flip Raman scattering from shallow and deep donor centres in nitrogen-doped p-type zinc selenide”
      P. J. Boyce, J. J. Davies, D. Wolverson, K. Ohkawa, T. Mitsuyu
      Applied Physics Letters 65, pp.2063-2065 (1994).

49.“Free induction decay and quantum beat of excitons in ZnSe”
      T. Saiki, T. Takeuchi, K. Ema, M. Kuwata-Gonokami, K. Ohkawa, T. Mitsuyu
      Journal of Crystal Growth 138, pp.805-808 (1994).

48.“Optical gain in an inhomogeneously broadened exciton system”
      T. Ishihara, Y. Ikemoto, T. Goto, A. Tsujimura, K. Ohkawa, T. Mitsuyu
      Journal of Luminescence 58, pp.241-243 (1994).

47.“
青色半導体レーザー
     
大川和

      レーザーセミナー, pp.VI1-VI16 (1994). 

46.“ZnSe
系青, 緑色半導体レーザとMBE成長
     
大川和宏
     
日本結晶成長学会誌 20, pp.367-376 (1993).

45.“ZnSe
系半導体のMBE成長と青緑色レーザー
     
三露常男 大川和宏
     
光学 22, pp.664-669 (1993).

44.“
青色半導体レーザ
      
大川和宏 三露常男
      National Technical Report 39, pp.416-419 (1993).

43.“CdZnSe/ZnSe SCH
構造のTEMCL観察
     
高橋康仁, 成沢忠, 林茂生, 大川和宏, 三露常男, 薮内康文, 西条浩志, 一色俊之, 塩尻旬寧剛, 小川和朗
     
信学技報 (1993)

42.“Fabrication and characterization of ZnSe-based blue/green laser diodes”
      A. Tsujimura, S. Yoshii, S. Hayashi, K. Ohkawa, T. Mitsuyu
      SPIE Proceedings Vol.1985 Physical Concept and  Materials for Novel Optoelectronic Device
      Applications II, pp.468-475, 1993.

41.“
セレン化亜鉛(ZnSe)の伝導型制御と青色・緑色半導体レーザーへの応用
      
大川和宏, 三露常男
      
応用物理 62, pp.113-119 (1993).

40.“
窒素ラジカルドーピング法によるp型ZnSeの作製
      
大川和宏, 三露常男
      
真空 36, pp.882-884 (1993).

39.“
青色半導体レーザー
      
大川和宏
     
レーザーセミナー, V15-V27 (1993).

38.“ZnSe
系の青色・緑色レーザ
     
大川和宏
     
薄膜・表面物理セミナー, pp.35-49 (1993).

37.“ZnSe-based diode lasers with stripe-geometry fabricated by ion bombardment”
      S.Yoshii, S.Hayashi, A.Tsujimura, K.Ohkawa, T.Mitsuyu, H.Takeishi, Y.Takahashi, T.Narusawa
      Japanese Journal of Applied Physics 32, pp.L1753-L1755 (1993).

36.“Cavity parameters of ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes”
      A. Tsujimura, S. Yoshii, S. Hayashi, K. Ohkawa, T. Mitsuyu
      Japanese Journal of Applied Physics 32, pp.L1750-L1752 (1993).

35.“Photopumped blue laser action in ZnSe-ZnMnSSe double heterostructure grown by molecular beam epitaxy”
      T. Karasawa, K. Ohkawa, T. Mitsuyu
      Japanese Journal of Applied Physics 32, pp.L1657-L1659 (1993).

34.“ZnSe-based laser diodes and p-type doping of ZnSe”
      K. Ohkawa, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu
      Physica B 185, pp.112-117 (1993).

33.“Characteristics of ZnCdSe single-quantum-well laser diodes”
      A. Tsujimura, S. Yoshii, S. Hayashi, K. Ohkawa, T. Mitsuyu, H. Takeishi
      Physica B 191, pp.130-132 (1993).

32.“Zn1-XCdXSe(X=0.2-0.3) single-quantum-well laser diodes without GaAs buffer layers”
      S. Hayashi, A. Tsujimura, S. Yoshii, K. Ohkawa, T. Mitsuyu
      Japanese Journal of Applied Physics 31, pp.L1478-L1480 (1992).

31.“Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layers”
      K. Ohkawa, A. Ueno, T. Mitsuyu
      Journal of Crystal Growth 117, pp.375-384 (1992).

30.“Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy”
      T. Saiki, T. Takeuchi, M. Kuwata-Gonokami,T. Mitsuyu, K. Ohkawa
      Journal of Crystal Growth 117, pp.802-805 (1992).

29.“Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with ion- and radical-beam doping techniques”
      K. Ohkawa, T. Mitsuyu
      Journal of Luminescence 52, pp.9-15 (1992).

28.“Giant nonlinear phase shift at exciton resonance in ZnSe”
      T. Saiki, T. Takeuchi, M. Kuwata-Gonokami, K. Ohkawa, T. Mitsuyu
      Applied Physics Letters 60, pp.192-194 (1992).

27.“ZnSe
系半導体の導電性制御と青緑色半導体レーザダイオード
      
林茂生, 吉井重雄, 辻村 , 大川和宏, 三露常男
      
電子材料研究 EFM-92-28, pp.55-62 (1992).

26.“Doping and MBE growth of ZnSe for blue LEDs and LDs”
      K. Ohkawa, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu
      Ext. Abstr. of the 1992 Int. Conf. on Solid State Devices and Materials, pp.330-332 (1992).

25.“p- and n-type doping of ZnSe homoepitaxial and heteroepitaxial layers”
      K. Ohkawa, A. Tsujimura, S. Hayashi, S. Yoshii, T. Mitsuyu
      11th Record of Alloy Semiconductor Physics and Electronics Symposium, pp.105-110 (1992).

24.“MBE
成長ZnSe系半導体の伝導型制御
      
大川和宏, 三露常男
      
応用物理学会 結晶工学分科会 98回研究会, pp.3-8 (1992).

23.“Homoepitaxial growth of p-type ZnSe layers on dry-etched substrates”
      K. Ohkawa, T. Mitsuyu
      Materials Research Society Symposium 228, pp.307-312 (1992).

22.“Electroluminescence from p-n junction LEDs consisting of N-doped and Cl-doped ZnSe layers”
      K. Ohkawa, A. Ueno, T. Mitsuyu
      Proceedings of Materials Research Society Symposium 228, pp.339-344 (1992).

21.“Blue electroluminescence from ZnSe p-n junction light-emitting diodes”
      K. Ohkawa, A. Ueno, T. Mitsuyu
      Japanese Journal of Applied Physics 30, pp.3873-3875 (1991).

20.“Molecular-beam epitaxial growth and characterization of ZnS-ZnXCd1-XS strained-layer superlattices”
      T. Karasawa, K. Ohkawa, T. Mitsuyu
      Journal of Applied Physics 69, pp.3226-3230 (1991). 

19.“p-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping”
      K. Ohkawa, T. Mitsuyu
      Journal of Applied Physics 70, pp.439-442 (1991).

18.“Blue electroluminescence from ZnSe p-n junction LEDs”
      K. Ohkawa, A. Ueno, T. Mitsuyu
      Ext. Abstr. of the 1991 Int. Conf. on Solid State Devices and Materials, pp.704-706 (1991).

17.“Characteristics of p-type ZnSe layers grown by molecular beam epitaxy with radical doping”
      K. Ohkawa, T. Karasawa, T. Mitsuyu
      Japanese Journal of Applied Physics 30, pp.L152-L155 (1991).

16.“Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth”
      K. Ohkawa, T. Karasawa, T. Mitsuyu
      Journal of Crystal Growth 111, pp.797-801 (1991).

15.“Treatment of ZnSe substrates for homoepitaxy”
      K. Ohkawa, T. Karasawa, T. Mitsuyu
      Journal of Vacuum Science & Technology B 9, pp.1934-1938 (1991).

14.“
ラジカルドーピング法を用いたpZnSeMBE成長
     
大川和宏, 三露常男
     
日本学術振興会 光電相互変換第125委員会 137回研究会, pp.1-6 (1991).

13.“Multiple states in surface lattice constant behavior during the molecular beam epitaxial growth of ZnTe-ZnS strained layer superlattices”
      T. Karasawa, K. Ohkawa, T. Mitsuyu
      Journal of Applied Physics 68, pp.4581-4585 (1990).

12.“ZnTe-ZnS strained-layer superlattices grown by ALE and MBE: Effect of strain on ZnTe incorporation”
      T. Karasawa, K. Ohkawa, T. Mitsuyu
      Journal of Crystal Growth 101, pp.118-121 (1990).

11.“Characterization of short-period ZnTe-ZnS superlattices grown by MBE”
      T. Karasawa, K. Ohkawa, T. Mitsuyu
      Journal of Crystal Growth 99, pp.464-467 (1990).

10.“Homoepitaxial growth of ZnSe on dry-etched substrates”
      K. Ohkawa, T. Karasawa, A. Yoshida, T. Hirao, T. Mitsuyu
      Applied Physics Letters 54, pp.2553-2555 (1989).

9.“Electron and x-ray diffraction study of ZnTe-ZnS strained-layer superlattices grown by molecular beam epitaxy”
    T. Karasawa, K. Ohkawa, T. Mitsuyu
    Applied Physics Letters 54, pp.117-119 (1989).

8.“MBE-grown ZnTe-ZnS strained-layer superlattices”
    T. Karasawa, K. Ohkawa, T. Mitsuyu
    Journal of Crystal Growth 95, pp.547-551 (1989).

7.“Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers”
    K. Ohkawa, T. Karasawa, T. Mitsuyu
    Physical Review B 38, pp.12465-12469 (1988).

6.“Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping technique”
    K. Ohkawa, T. Mitsuyu, O. Yamazaki
    Journal of Crystal Growth 86, pp.329-334 (1988).

5.“MBE
法におけるZnTe-ZnS歪超格子成長過程の観察および構造評価
   
柄沢武, 大川和宏, 三露常男
   
電子材料研究 EFM-89-8, pp.53-60 (1989).

4.“ZnSe
MBE成長とドーピング
    
大川和宏, 三露常男, 山崎攻
   
電子情報通信学会技 86, pp.89-95 (1987).

3.“Low resistivity Cl-doped ZnSe layers grown by molecular beam epitaxy”
    K. Ohkawa, T. Mitsuyu, O. Yamazaki
    Ext. Abstr. of the 18th (1986 Int.) Conf. on Solid State Devices and Materials, pp.635-638 (1986).

2.“Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy”
    K. Ohkawa, T. Mitsuyu, O. Yamazaki
    Journal of Applied Physics 62, pp.3216-3221 (1987).

1.“Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular  beam epitaxy with low-energy ion doping”
    T. Mitsuyu,  K. Ohkawa, O. Yamazaki
    Applied Physics Letters 49, pp.1348-1350 (1986).

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