12/20/2020 Red LEDs created by ECO Devices Lab show excellent performance. A key technology at KAUST is an original metalorganic vapor-phase epitaxy (MOVPE) technology. 12/18/2020 Prof. Ohkawa gave an online invited talk about AlGaN-MOVPE growth simulation. The talk explained the chemical process of nitride semiconductors’ MOVPE growth.http://cvd.jpn.org/future/ 12/4/2020 Prof. Ohkawa gave an online invited talk about
strain-compensated InGaN MQWs-based red LEDs at OPIC2020 ( Optics & Photonics Taiwan
International Conference). 11/16/2020 ECO Devices Lab and ALLOS will develop a key technology for
micro-LED displays. That is nitride-based red LEDs using synergy with GaN-on-Si
technology. The title of this article is “Micro-LED displays: new opportunities
for nitride-based red LED technologies”. 10/11/2020 The paper entitled "High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits" reports the growth of phosphor-free InGaN-based white light-emitting diodes by metalorganic vapor-phase epitaxy. 9/19/2020 The paper entitled " Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes" reports the numerically investigated the performance of N-polar AlGaN-based ultraviolet light-emitting diodes with different Al contents in quantum wells and barriers. 9/2/2020 ECO Devices Lab has discovered that a form of iron oxide makes an excellent co-catalyst for a promising photocatalytic material called gallium nitride. The article entitled “Standing the test of time with a perfect partner”. 9/2/2020 ECO Devices Lab has identified that the co-catalyst can significantly extend the working lifetime of solar fuel–generating photocatalysts. The article entitled “ Standing the test of time with a perfect partner ”. 9/1/2020 ECO Devices Lab has discovered that a form of iron oxide makes an excellent co-catalyst for a promising photocatalytic GaN material. The article entitled “Standing the test of time with a perfect partner”. The Nitride-Oxide material combination can significantly extend the working lifetime of photocatalyst for solar energy harvesting. 9/1/2020 ECO Devices Lab has discovered that a form of iron oxide makes an excellent co-catalyst for a promising photocatalytic material called gallium nitride. The article entitled “Standing the test of time with a perfect partner”. 9/1/2020 ECO Devices Lab has identified that the co-catalyst can significantly extend the working lifetime of solar fuel–generating photocatalysts. The article entitled “ Standing the test of time with a perfect partner ”. 8/25/2020 The book entitled " Simulation of Nitride Semiconductor MOVPE" describes MOVPE growth and its mechanism of nitride semiconductors such as GaN, AlN, AlGaN, and InGaN.
7/23/2020 The paper entitled "LOCAL HEAT ENERGY TRANSPORT ANALYSES IN GALLIUM-INDIUM-NITRIDE/GALLIUM NITRIDE HETEROSTRUCTURE BY MICROSCOPIC RAMAN IMAGING EXPLOITING
SIMULTANEOUS IRRADIATION OF TWO LASER BEAMS" reports the pump and probe method in Raman spectroscopy is valid for analyzing energy or heat transport across the heterointerface. This work is an international collaboration with Prof. Ishitani group at Chiba University.
Proceedings of the ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
Paper No: IPACK2020-2570, V001T06A002 (2020).
7/21/2020 LEDinside is widely read by engineers in the fields of LEDs and LDs. The article focused on our research results about very stable red-light InGaN LEDs at high temperatures. The output power is more stable than that of AlInGaP red LEDs.
7/21/2020 ALLOS Semiconductors (in Germany) announced its collaboration with ECO Devices Lab at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates. 7/21/2020 GaN-on-Si developer ALLOS Semiconductors (in Germany) announced it is collaborating with ECO Devices Lab (KAUST) to develop high-efficient nitride-based red LEDs on large diameter silicon substrates.
7/10/2020 The paper entitled "Photoelectrochemical and Crystalline Properties of a GaN Photoelectrode Loaded with α-Fe2O3 as Cocatalyst" reports the investigation of the heterostructure with α-Fe2O3/GaN characterized by TEM observations. The analytical observation of TEM is significantly important to develop the new material and its relative devices.
Sci Rep 10, 12586 (2020), DOI: 10.1038/s41598-020-69419-87/5/2020 ECO Devices Lab has succeeded in the high-temperature stability of InGaN-based red LEDs at KAUST. The article entitled “Red-light LEDs for next-generation displays”. The red LEDs where the output power is more stable than that of typical AlInGaP red LEDs.
5/15/2020 ECO Devices Lab has succeeded in the novel red LEDs by our original MOCVD at KAUST for the first time. The article entitled “Pure red LEDs fulfill a primary goal” features the pure red LEDs with highly efficient and low-operating voltage made from nitride semiconductors.
5/7/2020 ECO Devices Lab has been successful in making pure red LEDs by MOCVD for the first time. The article entitled “Researchers Make High-Intensity, Low-Voltage Red LEDs from Nitride Crystals” announces the pure red LEDs with highly efficient and low-operating voltage made from nitride semiconductors. 5/7/2020 ECO Devices Lab has developed the novel red LEDs by MOCVD at KAUST for the first time. The article entitled “Pure red LEDs fulfill a primary goal” features the pure red LEDs with highly efficient and low-operating voltage made from nitride semiconductors. 5/7/2020 LEDinside is announced our current research topics about pure red InGaN-LEDs. Our achievement is believed to support more efficient process of full-color Micro LED display development. 5/6/2020 ECO Devices Lab has succeeded in making the novel red LEDs by MOCVD at KAUST. The article entitled “Pure red LEDs fulfill a primary goal” features the pure red LEDs with highly efficient and low-operating voltage made from nitride semiconductors.
4/27/2020 Compound Semiconductor is a general journal of the United Kingdom and is widely read by engineers in the fields of optoelectronics and electronic devices. The journal focused on our research result about 665-nm LEDs since the emission peak wavelength and the low voltage are the important milestones in this field.
See the article on page 68 in Compound Semiconductor volume 26 issue 2 March 2020.
Link: https://data.angel.digital/pdf/Compound%20Semiconductor%20Issue%202%20March%202020%20-%20Online.pdf
4/14/2020 The paper entitled "Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes" reports the investigation of the effect of red LED chip size. It confirmed the specific feature of larger or smaller chip sizes. we obtained the high characteristic temperature of 399 K and the small redshift tendency of 0.066 nmK -1. This paper has been chosen as an Editor's Pick. Congratulations! 4/11/2020 The paper entitled "Boron influence on band-gap and photoluminescence in BGaN grown on AlN" reports the investigation of the born influence on the bandgap in GaN measured by contactless electroreflectance (CER) spectroscopy. This work is an international collaboration with Prof. Hommel group in Poland.
Journal of Applied Physics 127, 165703 (2020). DOI: 10.1063/1.5140413
3/31/2020 The paper entitled " 633-nm InGaN-based red LEDs
grown on thick underlying GaN layers with reduced in-plane residual stress" reports t he reduction
of the in-plane compressive stress in the underlying GaN layers was shown to be
crucial for enhancing the light-output power of InGaN-based red LEDs on
conventional sapphire substrates.
3/30/2020 The paper entitled " Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes" reports the optimal double ITO layers on InGaN-based amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO layers by e-beam evaporation.
3/20/2020 The paper entitled "Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers" reports the pump and probe method in Raman spectroscopy is valid for analyzing energy or heat transport across the heterointerface. This paper has been chosen as an Editor's Pick. Congratulations!
This work is an international collaboration with Prof. Ishitani group at Chiba University.
Applied Physics Letters 116, 142107 (2020); DOI: 10.1063/5.0003491 1/29/2020 The paper entitled "Demonstration of low forward
voltage InGaN-based red LEDs" reports the 665-nm peak red emission from
InGaN-based LED s at 20 mA under very low
operation voltage < 2.5 V. This paper has ranked in "MOST READ". Congratulations! Applied Physics Express 13, 031001 (2020). DOI: 10.35848/1882-0786/ab7168
7/31/2019 ECO Devices welcomes new Postdoc Zhe Zhuang! 7/5/2019 The paper entitled “A Stand-Alone Module for Solar-Driven H 2
Production Coupled with Redox-Mediated Sulfide Remediation ” reports successful
H 2S splitting into solid sulfur and hydrogen gas. H 2S is
toxic gas in crude oil plants. This is an international collaboration including
KAUST and Aramco. Energy
Technology 7, 1900575 (2019). DOI: 10.1002/ente.201900575 7/1/2019 Photonics Summer Camp will be held until July 31. 6/27/2019 ECO Devices welcomes new PhD student Mohammed Najmi! 6/20/2019 ECO Devices welcomes new PhD students Pavel Kirilenko and Artem Shushanian! 5/16/2019 Professor Kazuhiro Ohkawa elected Fellow of the Japan Society of Applied
Physics 3/21/2019 The paper entitled “Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN ” indicates the AlGaN growth mechanism. AlGaN is one of key materials for light-emitters and electronic devices.
3/6/2019 The paper entitled “Photoelectrochemical H2 generation from water using a CoOx/GaN photoelectrode" announced a new co-catalyst for GaN photocatalyst. 3/2/2019 The paper entitled “Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures" proposed an effective nano-structure.
2/19/2019 Arwa has earned 5th places and special awards in the IBDA’A National Olympiads, which took place in Riyadh. 2/8/2019 The paper entitled “Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys” will inspire InGaN MOVPE growth and their LED applications.Journal of Crystal Growth 512,
pp.69-73 (2019) . DOI: j.jcrysgro.2019.02.018
2/8/2019 The paper entitled “Investigation of p-GaN layer thickness of InGaN-based photoelectrode for photoelectrochemical hydrogen generation” mentioned the enhancement of energy conversion efficiency by band engineering. Japanese Journal of Applied Physics 58, SCCC32 (2019).
1/28/2019 Internship student Linping Qu leaves. Thank you very much! 12/25/2018 Prof. Ohkawa has delivered a talk about D evelopment of Nitride Photocatalyst. 12/17/2018 Prof. Ohkawa has delivered a talk about clean energy generation by
semiconductor photoelectrodes. 12/10/2018 We succeeded to explain AlGaN MOVPE growth mechanism. 11/15/2018 Daisuke has delivered the talk about the band engineering of an InGaN-based photocatalyst in International Workshop on Nitride Semiconductors 2018 (IWN2018). He designed the band structure of the material for improving the photoelectrochemical hydrogen generation from water. 11/13/2018 Daisuke has delivered the invited talk in International Workshop on Nitride Semiconductors 2018 (IWN2018). He explained about the state-of-the-art high In content InGaN-based amber, orange, and red LEDs. 11/12/2018 Martin has delivered the poster presentation in International Workshop on Nitride Semiconductors 2018 (IWN2018). This is the first time for him presented at an international conference. He discovered a new co-catalyst for nitride photocatalysts to split water into clean hydrogen and oxygen. 11/12/2018 Prof. Ohkawa has delivered a talk about clean energy generation by
semiconductor photoelectrodes. 10/24/2018 Prof. Ohkawa has delivered a talk about solid-state lighting and related
nitride MOVPE growth. 10/9/2018 ECO Devices Lab starts to grow III-Nitride materials by MOCVD. 8/13/2018 Prof. Ohkawa has delivered a talk about AlGaN MOVPE growth and simulation. 8/7/2018 We have succeeded to simulate AlGaN MOVPE growth
considering the polymer formation between Al- and Ga-related molecules. 7/31/2018 Prof. Ohkawa has delivered a talk about fundamental III-nitrides MOVPE growth. 7/1/2018 Photonics Summer Camp will be held until July 31. 6/4/2018 We have found out the growth mechanism of InGaN in
MOCVD and their application to grow full-color InGaN LEDs. 3/23/2018 Scientific discussion
Professors always like to discuss anything ... . 2/27/2018 From SoftBank, Japan!Tomohiro
Yamamoto is an alum of Ohkawa’s group. 2/3/2018 As a small relax activity from hard work, Research Scientist Daisuke Iida offered traditional Japanese food at his house for the ECO Devices members. 1/23/2018 Students Liang Zhang and Martin Velazquez took part in the KAUST WEP 2018 Science Fair showing a photocatalytic water splitting cell. 12/3/2017 ECO Devices welcomes Kuang-Sheng Ho to the research group. He joins as a Master Student 8/13/2017 Yuta Nakayama arrives as a Visiting Student from Kobe University in Japan 8/7/2017 ECO Devices welcomes Liang Zhang and Martin Velazquez-Rizo, new MS and PhD students respectively, that incorporate our Research Group 7/16/2017 Photonics Summer Camp will be held until August 10 5/18/2017 Visit of Nobel Laureate, Professor Shuji Nakamura (UCSB) to KAUST 4/13/2017 ECO Devices welcomes Daisuke Iida as a Research Scientist. 11/11/2016 ECO Devices welcomes Jose Maria Silva Corrugedo. He is the first staff member. 10/12/2016 D. Iida, K. Niwa, S. Kamiyama, and K. Ohkawa, “Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure“, Appl. Phys. Express 9, 111003 (2016). 10/11/2016 ECO Devices welcomes Carmen Leticia Castrejon Barron, first PhD student in the group. 9/19/2016 Prof. Ohkawa opens a new research group in KAUST. |