News

1/7/2021
Optics & Photonics News is a general journal from The Optical Society (OSA) in USA. This journal announced our very white LEDs which demonstrate a high CRI value of 88 out of 100. The article is entitled “A Phosphor-Free White LED”.

Link: https://www.osa-opn.org/home/newsroom/2021/january/a_phosphor-free_white_led/

12/21/2020
ECO Devices Lab has developed unique White LEDs without phosphor by the original MOCVD technology. Nitride-based LED quantum structure emits white light that covers 410-770 nm. The LED light covers over 90% of the human visible region.  The article entitled “Optoelectronic devices that emit warm and cool white light”. ​

Link: https://discovery.kaust.edu.sa/en/article/1068/optoelectronic-devices-that-emit-warm-and-cool-white-light

12/20/2020
Red LEDs created by ECO Devices Lab show excellent performance. A key technology at KAUST is an original metalorganic vapor-phase epitaxy (MOVPE) technology.

KAUST Discovery Issue 10 (August 31, 2020) / Fall semester 2020. p. 32-33

Link: https://discovery.kaust.edu.sa/magazine/pdf/5f9151e2e495741e2c784355

12/18/2020
Prof. Ohkawa gave an online invited talk about AlGaN-MOVPE growth simulation. The talk explained the chemical process of nitride semiconductors’ MOVPE growth.

http://cvd.jpn.org/future/

12/4/2020
Prof. Ohkawa gave an online invited talk about strain-compensated InGaN MQWs-based red LEDs at OPIC2020 (Optics & Photonics Taiwan International Conference).
11/16/2020
ECO Devices Lab and ALLOS will develop a key technology for micro-LED displays. That is nitride-based red LEDs using synergy with GaN-on-Si technology. The title of this article is “Micro-LED displays: new opportunities for nitride-based red LED technologies”.
10/11/2020
The paper entitled "High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits" reports the growth of phosphor-free InGaN-based white light-emitting diodes by metalorganic vapor-phase epitaxy.​ 
Appl. Phys. Lett. 117, 172103 (2020).​ DOI: 10.1063/5.002601
9/19/2020
​The paper entitled "Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes" reports the numerically investigated the performance of N-polar AlGaN-based ultraviolet light-emitting diodes with different Al contents in quantum wells and barriers. 
Optics Express 28, 30423 (2020). DOI: 10.1364/OE.403168​​
9/14/2020
Prof. Ohkawa delivered a lecture about science and technology of MOVPE for students and engineers from industries.

https://annex.jsap.or.jp/kessho/contents/2020/school200914.html

9/2/2020
ECO Devices Lab has discovered that a form of iron oxide makes an excellent co-catalyst for a promising photocatalytic material called gallium nitride. The article entitled “Standing the test of time with a perfect partner”. ​
9/2/2020
​ECO Devices Lab has identified that the co-catalyst can significantly extend the working lifetime of solar fuel–generating photocatalysts. The article entitled “Standing the test of time with a perfect partner”. ​
9/1/2020
​ECO Devices Lab has discovered that a form of iron oxide makes an excellent co-catalyst for a promising photocatalytic GaN material.  The article entitled “Standing the test of time with a perfect partner”. The Nitride-Oxide material combination can significantly extend the working lifetime of photocatalyst for solar energy harvesting.
9/1/2020
​ECO Devices Lab has discovered that a form of iron oxide makes an excellent co-catalyst for a promising photocatalytic material called gallium nitride. The article entitled “Standing the test of time with a perfect partner”. ​
9/1/2020
ECO Devices Lab has identified that the co-catalyst can significantly extend the working lifetime of solar fuel–generating photocatalysts. The article entitled “Standing the test of time with a perfect partner”. ​
8/25/2020
The book entitled " Simulation of Nitride Semiconductor MOVPE" describes MOVPE growth and its mechanism of nitride semiconductors such as GaN, AlN, AlGaN, and InGaN. 
7/23/2020
The paper entitled "LOCAL HEAT ENERGY TRANSPORT ANALYSES IN GALLIUM-INDIUM-NITRIDE/GALLIUM
NITRIDE HETEROSTRUCTURE BY MICROSCOPIC RAMAN IMAGING EXPLOITING
SIMULTANEOUS IRRADIATION OF TWO LASER BEAMS" reports the pump and probe method in Raman spectroscopy is valid for analyzing energy or heat transport across the heterointerface. 
This work is an international collaboration with Prof. Ishitani group at Chiba University.
Proceedings of the ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems 
Paper No: IPACK2020-2570, V001T06A002 (2020). 
7/21/2020
LEDinside is widely read by engineers in the fields of LEDs and LDs. The article focused on our research results about very stable red-light InGaN LEDs at high temperaturesThe output power is more stable than that of AlInGaP red LEDs
7/21/2020
ALLOS Semiconductors (in Germany) announced its collaboration with ECO Devices Lab at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates.
7/21/2020
ALLOS and ECO Devices Lab start to co-development of the high-efficiency nitride-based red LEDs on silicon. High-quality GaN-on-Si technique is attracted to develop the RGB micro-LEDs.
http://www.semiconductor-today.com/news_items/2020/jul/allos-210720.shtml​
7/21/2020
COMPOUND SEMICONDUCTOR announced that ALLOS and ECO Devices lab start the co-development of the high-efficiency nitride-based red LEDs on silicon. High-quality GaN-on-Si technique is attracted to develop the RGB micro-LEDs.
https://compoundsemiconductor.net/article/111649/Allos_And_KAUST_Collaborate_On_Nitride_Red_LEDs
7/21/2020
GaN-on-Si developer ALLOS Semiconductors (in Germany) announced it is collaborating with ECO Devices Lab (KAUST) to develop high-efficient nitride-based red LEDs on large diameter silicon substrates.
7/10/2020
The paper entitled "Photoelectrochemical and Crystalline Properties of a GaN Photoelectrode Loaded with α-Fe2O3 as Cocatalyst" reports the investigation of the heterostructure with α-Fe2O3​/GaN characterized by TEM observations. The analytical observation of TEM is significantly important to develop the new material and its relative devices.
Sci Rep 10, 12586 (2020)​, DOI: 10.1038/s41598-020-69419-8
7/5/2020
ECO Devices Lab has succeeded in the high-temperature stability of InGaN-based red LEDs at KAUST. The article entitled “Red-light LEDs for next-generation displays”. The red LEDs where the output power is more stable than that of typical AlInGaP red LEDs. 
5/15/2020
ECO Devices Lab has succeeded in the novel red LEDs by our original MOCVD at KAUST for the first time. The article entitled “Pure red LEDs fulfill a primary goal”  features the pure red LEDs with highly efficient and low-operating voltage made from nitride semiconductors. 
5/7/2020
ECO Devices Lab has been successful in making pure red LEDs by MOCVD for the first time. The article entitled “Researchers Make High-Intensity, Low-Voltage Red LEDs from Nitride Crystals”  announces the pure red LEDs with highly efficient and low-operating voltage made from nitride semiconductors. ​
5/7/2020
​ECO Devices Lab has developed the novel red LEDs by MOCVD at KAUST for the first time. The article entitled “Pure red LEDs fulfill a primary goal”  features the pure red LEDs with highly efficient and low-operating voltage made from nitride semiconductors. 
5/7/2020
​LEDinside is announced our current research topics about pure red InGaN-LEDs. Our achievement is believed to support more efficient process of full-color Micro LED display development.
5/6/2020
ECO Devices Lab has succeeded in making the novel red LEDs by MOCVD at KAUST. The article entitled “Pure red LEDs fulfill a primary goal”  features the pure red LEDs with highly efficient and low-operating voltage made from nitride semiconductors. 
5/4/2020
Compound Semiconductor is a general journal of the United Kingdom and is widely read by engineers in the fields of optoelectronics and electronic devices. The article focused on our research results about over 630-nm red LEDs. The output power, low operating voltage, high stability temperature are the important milestones in this field.

 Link:https://compoundsemiconductor.net/article/111154/KAUST_Team_Improves_High_Power_InGaN_Red_LEDs​

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4/27/2020

Compound Semiconductor is a general journal of the United Kingdom and is widely read by engineers in the fields of optoelectronics and electronic devices. The journal focused on our research result about 665-nm LEDs since the emission peak wavelength and the low voltage are the important milestones in this field.

 

See the article on page 68 in Compound Semiconductor volume 26 issue 2 March 2020.​

Link: https://data.angel.digital/pdf/Compound%20Semiconductor%20Issue%202%20March%202020%20-%20Online.pdf

4/14/2020
​The paper entitled "Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes" reports the investigation of the effect of red LED chip size. It confirmed the specific feature of larger or smaller chip sizes. we obtained the high characteristic temperature of 399 K and the small redshift tendency of 0.066 nmK-1​.​​ This paper has been chosen as an Editor's Pick. Congratulations!​
Appl. Phys. Lett. 116, 173501 (2020)DOI: 10.1063/5.0006910
4/11/2020
The paper entitled "Boron influence on band-gap and photoluminescence in BGaN grown on AlN" reports the investigation of the born influence on the bandgap in GaN measured by contactless electroreflectance (CER) spectroscopy.
This work is an international collaboration with Prof. Hommel group in Poland.
Journal of Applied Physics 127, 165703 (2020). DOI: 10.1063/1.5140413​
3/31/2020
​The paper entitled "633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress" reports the reduction of the in-plane compressive stress in the underlying GaN layers was shown to be crucial for enhancing the light-output power of InGaN-based red LEDs on conventional sapphire substrates.​​
Appl. Phys. Lett. 116, 162101 (2020). DOI: 10.1063/1.5142538​ ​
3/30/2020
The paper entitled "Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes" reports the optimal double ITO layers on InGaN-based amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO layers by e-beam evaporation.
Optics Express 28, 12311 (2020). DOI: 10.1364/OE.389725​
3/20/2020
The paper entitled "Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers" reports the pump and probe method in Raman spectroscopy is valid for analyzing energy or heat transport across the heterointerface. This paper has been chosen as an Editor's Pick. Congratulations!
This work is an international collaboration with Prof. Ishitani group at Chiba University.
​Applied Physics Letters 116, 142107 (2020); DOI: 10.1063/5.0003491
1/29/2020
The paper entitled "Demonstration of low forward voltage InGaN-based red LEDs" reports the 665-nm peak red emission from InGaN-based LEDs at 20 mA under very low operation voltage < 2.5 V. This paper has ranked in "MOST READ".​ Congratulations!

Applied Physics Express 13, 031001 (2020). DOI: 10.35848/1882-0786/ab7168​​

7/31/2019
ECO Devices welcomes new Postdoc Zhe Zhuang!
7/5/2019
The paper entitled “A Stand-Alone Module for Solar-Driven H2 Production Coupled with Redox-Mediated Sulfide Remediation ” reports successful H2S splitting into solid sulfur and hydrogen gas. H2S is toxic gas in crude oil plants. This is an international collaboration including KAUST and Aramco.

Energy Technology 7, 1900575 (2019).  DOI: 10.1002/ente.201900575​​

7/1/2019
 ​Photonics Summer Camp will be held until July 31​.
6/27/2019
​ECO Devices welcomes new PhD student​ Mohammed Najmi​​​!
6/20/2019
ECO Devices welcomes new PhD students Pavel Kirilenko and Artem Shushanian​​​!
3/21/2019
The paper entitled “Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN” indicates the AlGaN growth mechanism. AlGaN is one of key materials for light-emitters and electronic devices.

Journal of Crystal Growth 516, pp.17–20 (2019). DOI: j.jcrysgro.2019.03.023 
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3/6/2019
The paper entitled “Photoelectrochemical H2 generation from water using a CoOx/GaN photoelectrode" announced a new co-catalyst for GaN photocatalyst.

 Japanese Journal of Applied Physics 58, SCCC23 (2019).

 DOI: https://doi.org/10.7567/1347-4065/ab0f1d

3/2/2019
The paper entitled “Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures" proposed an effective nano-structure.
Nano Energy 59,  pp.569–573 (2019)DOI: j.nanoen.2019.03.011 
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2/19/2019
Arwa has earned 5th places and special awards in the IBDA’A National Olympiads, which took place in Riyadh. ​
2/8/2019
The paper entitled “Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys” will inspire InGaN MOVPE growth and their LED applications.
​​​​​​Journal of Crystal Growth 512, pp.69-73 (2019).​ DOI: ​j.jcrysgro.2019.02.018​

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2/8/2019
The paper entitled “Investigation of p-GaN layer thickness of InGaN-based photoelectrode for photoelectrochemical hydrogen generation” mentioned the enhancement of energy conversion efficiency by band engineering.
 Japanese Journal of Applied Physics 58, SCCC32 (2019).
1/28/2019
Internship student Linping Qu leaves. Thank you very much!​
12/25/2018
Prof. Ohkawa has delivered a talk about Development of Nitride Photocatalyst.

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12/17/2018
Prof. Ohkawa has delivered a talk about clean energy generation by semiconductor photoelectrodes.

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11/15/2018
Daisuke has delivered the talk about the band engineering of an InGaN-based photocatalyst in International Workshop on Nitride Semiconductors 2018 (IWN2018). He designed the band structure of the material for improving the photoelectrochemical hydrogen generation from water. ​
11/13/2018
Daisuke has delivered the invited talk in International Workshop on Nitride Semiconductors 2018 (IWN2018). He explained about the state-of-the-art high In content InGaN-based amber, orange, and red LEDs.​​
11/12/2018
Martin has delivered the poster presentation in International Workshop on Nitride Semiconductors 2018 (IWN2018). This is the first time for him presented at an international conference. He discovered a new co-catalyst for nitride photocatalysts to split water into clean hydrogen and oxygen. 
10/24/2018
Prof. Ohkawa has delivered a talk about solid-state lighting and related nitride MOVPE growth.

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10/9/2018
ECO Devices Lab starts to grow III-Nitride materials by MOCVD. ​​
8/13/2018
Prof. Ohkawa has delivered a talk about AlGaN MOVPE growth and simulation.
8/7/2018
We have succeeded to simulate AlGaN MOVPE growth considering the polymer formation between Al- and Ga-related molecules.

7/1/2018
Photonics Summer Camp will be held until July 31.​​
6/4/2018
We have found out the growth mechanism of InGaN in MOCVD and their application to grow full-color InGaN LEDs.

3/23/2018
Scientific discussion

Professors always like to discuss anything ... .

2/27/2018
From SoftBank, Japan!

Tomohiro Yamamoto is an alum of Ohkawa’s group.​​​​

2/3/2018
As a small relax activity from hard work, Research Scientist Daisuke Iida offered traditional Japanese food at his house for the ECO Devices members.
1/23/2018
​Students Liang Zhang and Martin Velazquez took part in the KAUST WEP 2018 Science Fair showing a photocatalytic water splitting cell.  ​
12/3/2017
​ECO Devices welcomes Kuang-Sheng Ho to the research group. He joins as a Master Student​
8/13/2017
​Yuta Nakayama arrives as a Visiting Student from Kobe University in Japan
8/7/2017
ECO Devices welcomes Liang Zhang and Martin Velazquez-Rizo, new MS and PhD students respectively, that incorporate our Research Group​​​
7/16/2017
Photonics Summer Camp will be held until August 10​​
5/18/2017
​Visit of Nobel Laureate, Professor Shuji Nakamura (UCSB) to KAUST​​
4/13/2017
​ECO Devices welcomes Daisuke Iida as a Research Scientist.​​​
11/11/2016
ECO Devices welcomes Jose Maria Silva Corrugedo. He is the first staff member.
10/12/2016
D. Iida, K. Niwa, S. Kamiyama, and K. Ohkawa, “Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure“, Appl. Phys. Express 9, 111003 (2016). ​​
10/11/2016
ECO Devices welcomes Carmen Leticia Castrejon Barron, first PhD student in the group.
9/19/2016
​Prof. Ohkawa opens a new research group in KAUST. ​​​​​​​